多端口石墨烯系统中的非局域电阻

非局域测量方法由于其能够间接探测某些难以直接俘获的非平庸物理机理,近年来已逐渐成为凝聚态物理的研究热点之一.最近的实验在H形多端口石墨烯样品中发现了巨大的非局域电阻信号.在排除了经典欧姆、边缘态等可能的输运形式后,人们倾向于认为这类非局域电阻是由多端石墨烯系统中存在的自旋霍尔效益或谷霍尔效应所导致.借助于非平衡格林函数输运计算,目前的理论可以在同样的多端石墨烯体系中得到部分与实验符合较好的数值模拟结果.针对实验中发现的某些难以理解的、甚至与经典理论相矛盾的非局域电阻性质,例如非局域电阻相比局域电阻在偏离电中性点时的迅速衰减、出现在能隙中的非局域电阻峰值等,目前的理论研究取得了一定的进展,但对这些奇异现象的理解仍存在较大的争议.本综述详细回顾了多端口石墨烯体系中非局域电阻的相关实验,并针对性地介绍与之配套的理论进展及对未来研究的展望.     

Transport properties in monolayer–bilayer–monolayer graphene planar junctions

The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer–bilayer–monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer–Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.