Study on electrical defects level in single layer two-dimensional Ta_2O_5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5.     

基于全反射的发光二极管-照明光纤耦合器的设计与研制

光纤照明由于具有成本低、安全性高、便携性好和装饰性强等优势,已经逐渐进入了人们的视野。然而,现阶段的光源[特别是发光二极管(LED)]由于辐射发散角大,与照明光纤的耦合效率普遍较低。为了解决这个问题,根据全反射原理,设计并制作了一种LED-照明光纤耦合器。经过实验验证,该耦合器具有聚光性强、耦合效率高、体积小、制备简便和成本低等优点,是一种能够有效提升LED-光纤耦合效率的方式。