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测量了从欠掺杂区域到过掺杂区域变化的一系列Bi2212单晶样品ab平面内和c方向电阻率ρab.ρc随温度T的变化关系.按照几种不同模型分析了测量数据.比较两块处于过掺杂区域的Bi2Sr2CaCu2O8+δ(单晶和Bi2-xPbxSr2CaCu2O8+δ(单晶,发现尽管平面内电阻率ρab与温度T依赖行为类似,且Tc值基本相同,但c方向电阻率ρc与温度T的行为差别很大.这种氧空缺和离子取代的无序效应所造成c方向电阻率ρc不同温度行为表明:无序的阻挡层(blockinglayer)对于c方向电阻率ρc有重要影响 相似文献
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At temperature above 1 K, we measured the temperature dependence of the longitudinal and Hall resistivity ρxx,ρxy in the regime of the quantum Hall plateau-to-plateau transitions. The localization exponent v is extracted with an approach based on the variable range hopping theory. We find the quantity v ≈ 2.3 at the second Landau level, which is proven to be accurately universal. 相似文献
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