蒸镀法制备全有机并五苯薄膜场效应晶体管

以全蒸镀方法在真空室内一次性制备了正装结构的全有机并五苯薄膜场效应晶体管。正装结构全蒸镀法有利于简化工艺制备程序,缩小器件尺寸,提高集成度。制备的绝缘层厚度仅为50nm的全有机薄膜场效应晶体管,器件的工作电压降至10V,相同电压下饱和输出电流有了明显提高。筛选适当的有机绝缘材料,改善全有机薄膜场效应晶体管有源层/绝缘层的界面性能,使阈值电压几乎降至0V,场效应迁移率提高了3倍多,输出饱和电流也有了明显的提高。     

Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene

Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm^2/Vs, whereas the field-effect electron mobility was about O.02 cm^2 /Vs for n-channeL