Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.     

Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.     

Silicon Dioxide Coating Deposited by PDPs on PET Films and Influence on Oxygen Transmission Rate

A silicon dioxide film is deposited on the polyethyleneterephtMate （PET） by a penning discharge plasma source at ambient temperature in a high vacuum chamber. Hexamethyldisiloxane and oxygen are adopted as precursor and reactive reagent to grow a nano-scale silicon dioxide layer on polymer surfaces. For the chemical structure analysis X-ray photoelectron spectroscopy is performed to demonstrate the content of Si, 0 and C elements. It is noticed that a higher silicon concentration is contained if Ar plasma is used for pretreatment. X-ray diffraction analysis shows that a micro-crystal silicon dioxide is formed by peak patterns at 25,84° and 21.8°. The barrier properties examined by oxygen transmission rate show that the permeation parameter of the 12-μm-thick PET film drastically decreases from 135 cc/m^2 per day for the control one to O. 713 cc/m^2 per day for the as-deposited one after Ar plasma treatment. The surface morphology related to the barrier properties of SiOx-coated polymers os also investigated by scanning electron microscopy and atomic force microscopy.     

多腔耦合微波表面波PECVD法沉积DLC薄膜研究

报道了利用多腔耦合微波表面波等离子体增强化学气相沉积(PECVD)的方法制备类金刚石(DLC)薄膜。通过发射光谱(OES)测量,对Ar等离子体中的各种放电参数以及全部四个腔室内放电的均匀性作出评估。采用表面轮廓仪测量了薄膜的厚度;薄膜的表面形貌、组成结构通过原子力显微镜(AFM)、激光拉曼光谱和X射线衍射光谱(XPS)进行了表征。在12.5μm厚度的有机薄膜聚酯(PET)表面沉积一定厚度DLC后,通过测量水蒸气透过率(WVTR)对DLC薄膜的阻隔性能进行了研究。结果表明,这种多腔耦合微波表面波等离子体装置,不仅能够实现四个腔室同时相对均匀的放电,也能够实现单个腔室的轴向均匀放电。制备的DLC薄膜结构致密、成分均匀,可以使PET薄膜阻隔性能提高约20倍。