A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding

A red-light AIGalnP light emitting diode （LED） is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance （EL） test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current-voltage （I- V） measurement indicates that the bonding processes do not impact the electrical property of AIGalnP LED in the small voltage region （V 〈 1.5 V）. In the large voltage region （V 〉 1.5 V）, the I-V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.     

GaN基双波长发光二极管电致发光谱特性研究

通过同时调节同一有源区内不同阱层和垒层的In组分，制备了GaN基单有源区蓝、绿光双波长发光二极管(LED).实现了20mA下蓝、绿光同时发射.实验发现随注入电流由10mA增大到60mA，电致发光(EL)谱中绿光峰强度相对于蓝光峰强度不断增强，峰值波长蓝移也更加明显.同时考虑极化效应和载流子不均匀分布的影响，通过对一维薛定谔方程、稳态速率方程和泊松方程的联立自洽求解.分析了测试电流下蓝、绿光EL谱峰值波长和功率的变化情况.发现理论结果与实验结果有很好地符合. 关键词： 极化 载流子不均匀分布 双波长