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高压调控是一种能够对材料的结构、电学、光学等物理特性实现高效、连续且可逆变化的实验手段;拉曼光谱则是一种能够对材料的晶相等结构信息实现精准、快速、无损分析的研究方法.本文结合了金刚石对顶砧高压技术和原位偏振拉曼光谱技术,对二硫化铼(ReS2)晶体的拉曼振动模式随压强的演变过程进行了深入研究.实验发现ReS2的常压相(1T’)在3.04 GPa的压强下转变为一个扭曲1T’相,继而在14.24 GPa压强下发生了Re4原子簇的层内形变,并且在22.08和25.76 GPa分别发生了不同方向的层间无序叠加向有序叠加的转变.这一系列独特的实验现象充分展现了该二维材料的面内各向异性,并证实ReS2晶体的各向异性随压强的增加而变得愈发显著.本文研究表明压强在调节材料性能方面的关键作用,揭示了ReS2晶体在制备各向异性光学器件和光电器件等方面的潜力. 相似文献
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纸质构件力学性能试验研究 总被引:1,自引:1,他引:0
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The effects of gate oxide traps on gate leakage current and device performance of metal–oxide–nitride–oxide–silicon(MONOS)-structured NAND flash memory are investigated through Sentaurus TCAD. The trap-assisted tunneling(TAT)model is implemented to simulate the leakage current of MONOS-structured memory cell. In this study, trap position, trap density, and trap energy are systematically analyzed for ascertaining their influences on gate leakage current, program/erase speed, and data retention properties. The results show that the traps in blocking layer significantly enhance the gate leakage current and also facilitates the cell program/erase. Trap density ~1018 cm-3 and trap energy ~ 1 eV in blocking layer can considerably improve cell program/erase speed without deteriorating data retention. The result conduces to understanding the role of gate oxide traps in cell degradation of MONOS-structured NAND flash memory. 相似文献
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