在人工拓扑超导体磁通涡旋中寻找Majorana零能模

寻找具有拓扑序的新物质态是目前一个非常活跃和令人激动的研究领域.与拓扑绝缘体类似,在超导体中也存在着拓扑非平庸的超导态,它与传统的超导体在拓扑性上是不等价的,这种具有非平庸拓扑序的超导体被称为拓扑超导体.拓扑超导体在体内具有非零的超导能隙,而在表面有无能隙的表面态.理论预言在拓扑超导体中能够实现具有非Abelian统计特性的Majorana费米子. Majorana费米子可以用来构建拓扑量子比特,在拓扑量子计算方面有重大的科研和应用前景.拓扑绝缘体的出现催生出了许多人工拓扑超导体材料.本专题将主要介绍在拓扑绝缘体/超导体异质结中探测Majorana费米子的一系列实验工作.通过对拓扑超导体的研究,人们对超导电性有了全新的认识,有可能找到实现Majorana费米子新奇量子物理性质的方法.     

脉冲激发三能级体系半导体量子点的单光子发射效率

研究了脉冲激发下单个半导体量子点中单光子发射的统计特性.在旋转波近似条件下，由系统粒子数演化主方程并结合量子回归理论推导了二阶相关函数的运动方程，利用此方程讨论了二阶相关函数随输入脉冲面积的关系.在窄脉冲宽度的脉冲激发下，单光子的发射概率p和效率η都随着强度的增强而产生振荡.研究表明，采用窄脉冲宽度，当输入脉冲面积在π附近时可以得到较高的单光子发射效率. 关键词： 半导体量子点 单光子发射 三能级系统     

表面吸附K原子的多层FeSe/SrTiO3(001)薄膜的抗磁响应的原位测量

SrTiO₃（001）单晶表面上生长的单层FeSe薄膜显示出了超乎寻常的高温超导电性,其超导增强机制的一个重要因素是电子由衬底转移到了单层FeSe薄膜当中.基于此认识,研究者们在吸附了钾（K）原子的多层FeSe薄膜表面上观察到了类似超导能隙的隧穿能谱和光电子能谱.但这种自上而下的电子掺入方式在多层FeSe薄膜表面上可能引起的高温超导电性,还缺乏零电阻或迈斯纳效应等物性测量实验的直接证实.本研究利用自行研制的一台特殊的多功能扫描隧道显微镜,在生长于SrTiO₃（001）衬底上的多层FeSe薄膜表面上,不但观察到了超导能隙随K吸附量的变化,而且利用原位双线圈互感测量技术,成功地的观察到了该薄膜的抗磁响应,并由此确定了该薄膜样品呈现迈斯纳效应的超导转变温度为23.9 K.其穿透深度随温度的变化呈二次幂指数关系,表明该体系的超导序参量很可能具有S^±配对对称性.     

Controllable Modulation to Quantum Well States on β-Sn Islands

We investigate the surface structure and electronic properties of β-Sn islands deposited on a graphitized 6 H-SiC(0001) substrate via low temperature scanning tunneling microscopy and spectroscopy.Owing to the confinement of the island geometry,quantum well states(QWSs) are formed,manifesting as equidistant peaks in the tunneling spectra.Furthermore,a distinct strip feature appears on the surfaces of odd-layer Sn islands,ranging from 15-19 layers,which is not present on the surfaces of even-laye...     

SrTiO_3(001)衬底上多层FeSe薄膜的分子束外延生长

近几年,由于用分子束外延法在SrTiO_3衬底表面制备的单层FeSe具有很高的超导转变温度而引发了极大的研究热潮,随之而来的是对多层FeSe薄膜日益增长的研究兴趣.但目前还没有对成功生长高质量多层FeSe薄膜的详细报道.本文利用高能电子衍射仪(RHEED)实时监控在不同生长条件下制备的多层FeSe薄膜,发现在FeSe薄膜的生长初期,RHEED图像的强度演化基本符合台阶密度模型的描述特征,即台阶密度ρ正相关于衍射条纹强度.FeSe(02)衍射条纹的强度在第一生长周期内呈现稳定而明显的峰型振荡,而且不受高能电子掠射角的影响,最适合用来标定FeSe薄膜的厚度.结合扫描隧道显微镜对FeSe薄膜质量的原位观察,确定了制备多层FeSe薄膜的最佳生长条件,为FeSe薄膜的物性研究提供了重要的材料基础.     

双激子和浸润层泄漏以及俄歇俘获对量子点Rabi振荡衰减的影响

研究了脉冲激光激发下半导体量子点激子Rabi振荡中多能级过程引起的退相干特性.运用多能级粒子数运动方程组，分别计算和分析了三种多能级过程(双激子、浸润层泄漏以及俄歇俘获过程)对量子点中Rabi振荡衰减的影响.分析表明，双激子的影响在激发脉冲的脉宽较长时(>5ps)可以忽略；浸润层的泄漏虽然使得激子基态上粒子数振荡的振幅随着激发场的增强而减小，但是同时也导致了振荡平均值的减小；分析和讨论了两种俄歇俘获方式对激子振荡和复合发光的影响. 关键词： Rabi振荡 半导体量子点 退相干 俄歇俘获     

Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

Metastable Face-Centered Cubic Structure and Structural Transition of Sn on 2H-NbSe_2(0001)

Surface structures and properties of Sn islands grown on superconducting substrate 2H-NbSe_2(0001)are studied using low temperature scanning tunneling microscopy or spectroscopy.The pure face-centered cubic(fee)structure of Sn surface is obtained.Superconductivity is also detected on the fcc-Sn(111)surface,and the size of superconducting gap on the Sn surface is nearly the same as that on the superconducting substrate.Furthermore,phase transition occurs from fcc-Sn(111)toβ-Sn(001)by keeping the sample at room temperature for a certain time.Due to the strain relaxation on theβ-Sn islands,both the in-plane unit cell and out-of-plane structures distort,and the height of surface atoms varies periodically to form a universal ripple structure.     

Surface Structure and Reconstructions of HgTe(111) Surfaces

Hg Te(111) surface is comprehensively studied by scanning tunneling microscopy/spectroscopy(STS).In addition to th√e prim√itive(1 × 1)√ hexagonal lattice,six reconstructed surface structures are observed:(2 × 2),2 × 1,4 × 1,3 ×(1/2)3,2(1/2)2 × 2 and (1/2)11 × 2.The(2 × 2) reconstructed lattice maintains the primitive hexagonal symmetry,whi√le the lattices of the other five reconstructions are rectangular.Moreover,the topographic features of the3 ×(1/2)3 reconstruction are bias dependent,indicating that they have both topographic and electronic origins.The STSs obtained at different reconstructed surfaces show a universal dip feature with size ～100 mV,which may be attributed to the surface distortion.Our results reveal the atomic structure and complex reconstructions of the cleaved Hg Te(111) surfaces,which paves the way to understand the rich properties of Hg Te crystal.     

Band Structures of Ultrathin Bi(110) Films on Black Phosphorus Substrates Using Angle-Resolved Photoemission Spectroscopy

The band structures of two-monolayer Bi(110) films on black phosphorus substrates are studied using angleresolved photoemission spectroscopy. Within the band gap of bulk black phosphorus, the electronic states near the Fermi level are dominated by the Bi(110) film. The band dispersions revealed by our data suggest that the orientation of the Bi(110) film is aligned with the black phosphorus substrate. The electronic structures of the Bi(110) film strongly deviate from the band calculations of the free-standing Bi(110) film, suggesting that the substrate can significantly affect the electronic states in the Bi(110) film. Our data show that there are no non-trivial electronic states in Bi(110) films grown on black phosphorus substrates.