高电荷态离子$lt;sup$gt;126$lt;/sup$gt;Xe$lt;sup$gt;$lt;i$gt;q$lt;/i$gt;+$lt;/sup$gt;引起GaN表面形貌变化研究

用不同电荷态的¹²⁶Xe^q+离子（9≤q≤30）在室温下轰击GaN晶体表面,经原子力显微镜分析表明,当q>18,辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时,样品表面形貌还与入射离子的剂量和入射角有关;在实验参数范围,与入射离子的初动能没有明显关系（180 keV≤E_k≤600 keV）.当入射离子的电荷态q=18,与样品表面法线成60°角倾斜入射和垂直表面入射时,样品的表面几乎没有变化,只是倾斜入射后有很微小的隆起;当q＜18时,样品表面膨胀隆起,粗糙度增强,倾斜入射时表面隆起比垂直入射时更明显,而且都有清晰的峰状分界区;当q＞18时,样品表面被蚀刻呈凹陷状,有明显的齿状刻痕,且侵蚀深度与离子剂量近似呈线性关系,倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度. 关键词： 高电荷态离子 GaN晶体 原子力显微镜 表面形貌     

He注入单晶Si表面形貌的变化研究

沿Si的（100）面注入He离子, 能量为30 keV、 剂量为5×1016 ions/cm2。 注入后样品切成几块, 在真空炉中分别做退火处理, 退火温度从600 ℃到1 000 ℃, 退火时间均为30 min。 利用原子力显微镜研究了各个样品表面形貌的演化。 发现样品表面形貌与退火温度相关联。 假设在气泡中He原子与空位的比值很高, 导致样品内部存在高压的He泡, 从而使样品表面形貌发生变化。 探讨了在Si中He泡随退火温度的演化和He原子在材料中的释放机制及其对表面的影响。     

注氦尖晶石的红外光谱研究

利用傅立叶变换红外光谱仪对注He尖晶石样品随退火温变化而引起光吸收性能的变化进行了研究。 发现尖晶石样品在626.4 cm-1附近的吸收峰随注入剂量的增加向小波数方向移动, 而在随后退火过程该吸收峰随退火温度的增加而向大波数方向回复。 该吸收峰的回复行为依赖于注入剂量和退火温度。 认为在626.4 cm-1附近吸收峰随注入剂量和退火温度的这种变化与尖晶石中He的俘获以及释放有关。 The infrared absorption behavior of helium implanted spinel with annealing temperature was studied by Fourier transformed infrared (FTIR) spectroscopy. It was found that the absorbance peak at 626.4 cm-1 shifted to smaller wave numbers with the increase of implantation fluence, while on subsequent annealing the absorbance peak shifted back to larger wave numbers with the increase of annealing temperature. The shift of the peak at 626.4 cm-1 with He implantation/annealing is considered to be related with the trapping and release of helium atoms in lattice sites in the spinel crystal.     

He离子注入的尖晶石中Au纳米颗粒的合成研究

利用20 keV的He离子注入表面蒸镀了Au薄膜的尖晶石（MgAl2O4）样品, 随后对注入样品进行了退火处理。 在紫外可见光谱上观察到了由于金属纳米颗粒的存在而引起的较强的表面等离子体共振吸收峰, 提供了材料中金属纳米颗粒形成的光谱证据。 并对形成的Au纳米颗粒的尺寸随退火温度以及He注入剂量的变化进行了研究。 Spinel deposited with a thin Au film was implanted with helium ions, and annealed in vacuum condition subsequently. The surface Plasmon resonance absorbance peak due to the existence of metallic nanoparticles in the dielectric matrix was observed on the Ultraviolet Visible Spectrometry, indicating the formation of metallic nanoparticles in spinel. The dependence of Au particles size with annealing temperature and implantation doses was also investigated.     

Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions

The surface damage to gallium nitride films irradiated by Ar^q＋ （6≤q≤16） ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range （120 keV≤Ek≤220 keV）. For q≤14, surface of the irradiated region is covered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state, and increase with the increase of dose and charge state. Especially at and near boundary, a sharp bump like ridges in irradiated areas is observed, and there appear characteristic grooves in un-irradiated areas. For q=16, surface of the irradiated region was etched and erased.     

Comparison of helium bubble formation in F82H,ODS, SIMP and T91 steels irradiated by Fe and He ions simultaneously

Ferritic-martensitic steels and ODS steels are attractive candidates for structural materials in advanced nuclear-power systems due to their good swelling resistance. Four kinds of steels, F82 H, 15 Cr-ODS, SIMP and T91, are investigated in this study. We take 6.4 Me V Fe3+ ions and energy-degraded 1.0 Me V He+ ions in the irradiation of these materials to 5 dpa and 60 appm He/dpa, 200 appm He/dpa and 600 appm He/dpa at 300℃ and 450℃, respectively. The bubble formation and distribution are investigated by transmission electron microscopy(TEM). Formation and distribution of the bubbles in the four investigated steels are compared. The influence of irradiation temperature and helium injection ratio on bubble formation is discussed. It is found that there appears to be homogenously distributed bubbles at 300℃ irradiation while heterogeneously distributed bubbles at 450℃ irradiation.     

SFC新引出系统的物理设计研究

兰州重离子加速器(HIRFL)是一个回旋加速器组合系统. 它的注入器是K=69的扇聚焦回旋加速器.在十多年运行过程中, 曾做过两次较大的改进, 使加速的束流种类及流强都有了显著的改善.但由于SFC的引出效率比较低, 只有30%左右, 一方面损失了大量束流, 另一方面许多束流损失在引出静电偏转板上, 造成了大量出气, 破坏了真空, 难以维持长期大束流运行. 文章重新对SFC引出系统进行了物理设计研究, 在真实磁场的基础上做了大量计算工作, 得到了一个新的引出 系统方案.     

Kr离子注入SiC的拉曼光谱研究

应用拉曼光谱研究了5 MeV Kr离子（注量分别为5×1013,2×1014,1×1015 ions/cm2）室温注入6H SiC单晶及其高温退火处理后结构的变化。 研究表明, 注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰, 还产生了同核Si—Si键和C—C键散射峰。 Si—C散射峰强度随退火温度升高而增强, 当退火温度高达1000 ℃时, 已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大, 而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度（Relative Raman Intensity, 简称RRI）随注量的增加逐渐减小并趋于饱和, 且不同退火温度样品的饱和注量不相同; RRI随退火温度的增加逐渐升高, 这在低注量样品中表现得尤为明显。 低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离, 并且退火温度越高, 分离越大。 Raman spectroscopy was used to study the structure changes of 6H SiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.     

惰性气体离子注入铝镁尖晶石合成金属纳米颗粒的探索

实验在表面蒸镀了金属(Cu,Au)薄膜的尖晶石(MgAl₂O₄)样品中注入惰性气体离子(Ar,He),随后对注入样品进行了退火处理.在紫外可见光谱上观察到了由于金属纳米颗粒存在引起的较强的表面等离子体共振吸收峰,提供了材料中金属纳米颗粒形成的证据.采用这种方法在材料中引入金属纳米颗粒,发现影响金属纳米颗粒形成的因素除了退火温度外,金属薄膜厚度的影响不可忽略. 关键词： 金属纳米颗粒 离子注入 惰性气体离子 紫外可见光谱     

一种低活化铁素体/马氏体钢的高能重离子辐照效应研究

低活化的铁素体/马氏体钢是先进核能装置（如聚变堆）的重要候选结构材料。 在聚变堆实际工作环境下, 由于高温和高氦产生率引起的材料失效是这类材料面临的一个重要问题。 本项研究以兰州重离子加速器（HIRFL）提供的中能惰性气体离子束（20Ne, 122 MeV）作为模拟辐照条件, 借助透射电子显微镜, 研究了一种低活化的9Cr铁素体/马氏体钢（T92B）组织结构的变化和辐照肿胀。 实验结果表明, 高温下当材料中晶格原子的撞出损伤和惰性气体原子沉积浓度超过一定限值时, 材料内部形成高浓度的空洞, 并且空洞肿胀率显著依赖于辐照温度和剂量; 在马氏体板条界面及其它晶界处空洞趋于优先形成, 并且在晶界交汇处呈加速生长。 基于氦泡的形核生长与空洞肿胀的经典模型探讨了在不同辐照条件（He离子、 Ne离子、 Fe/He离子双束、 快中子、 Ni离子）下铁素体/马氏体钢中肿胀率数据的关联。Low activation Ferritic/Martensitic steels are a kind of important structural materials candidate to the application in advanced nuclear energy systems. Possible degradation of properties and even failure in the condition of high temperature and high helium production due to energetic neutron irradiation in a fusion reactor is a major concern with the application of this kind of materials. In the present work microstructural evolution in a 9Cr Ferritic/Martensitic steel (T92B) irradiated with 122 MeV 20Ne ions at temperatures between 0.3—0.5 Tm (Tm is the melting point of the material) was investigated with transmission electron microscopy. High concentration voids were observed in the specimens irradiated at high temperatures when the displacement damage dose and Ne concentration exceed a certain level. Preferential formation of voids at lath boundaries and other grain boundaries was found. The data of void swellings in 9Cr ferritic/martensitic steels irradiated in different conditions (such as with He ions, Ne ions, Fe/He dual beams, fast neutrons, Ni ions etc.) were compiled and analyzed based on a classic model of helium bubble formation, and bubble to void transition.