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TiO2 nanofibers are synthesized via a simple electrospinning method and coated on a silicon substrate with Pt electrodes to fabricate a micro-structure sensor. This sensor exhibits high ethanol sensing properties at 300℃. The sensitivity is up to 4 when the sensor is exposed to 1 ppm ethanol, the response time is about 3s, and the recovery is about 5 s. 相似文献
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First-principles study of structrural and corrected band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO systems 下载免费PDF全文
A first-principles method based on density functional theory(DFT),a generalized gradient approximation(GGA),and a projector-augmented wave(PAW) are used to study the structual and band properties of wurtzite Zn1-xCdxO and Zn1-xMgxO(0 ≤x≤1) ternary alloys.By taking into account all of the possible structures,the band gaps of Zn1-xCdxO and Zn1-xMgxO alloys are corrected and compared with experimental data. 相似文献
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We deposited high quality ZnO film by electrophoretic deposition (EPD) using high quality ZnO powder prepared by solid-state pyrolytic reaction. X-ray photoelectron spectroscopy (XPS) and the infrared (IR) absorption spectrum clearly indicate that the ZnO phase powder has been prepared. Transmission electron microscope (TEM) imaging and x-ray diffraction (XRD) show that the average grain size of the powder is about 20nm. XRD and selected-area electron diffraction (SAED) reveal that the ZnO film has a polycrystalline hexagonal wurtzite structure. Only a strong ultraviolet emission peak at 390nm can be observed at room temperature. 相似文献
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ZnO是一种新型宽禁带直接带隙Ⅱ-Ⅵ族半导体材料,室温激子束缚能高达60meV,远大于室温热离化能(26meV),因此ZnO是适于室温或更高温度下使用的高效紫外发射材料。ZnO半导体量子点材料与体材料相比具有崭新的光电特性,特别在紫外激光器件方面,与ZnO的激子特性密切相关,因此理论上对ZnO量子点中激子的基态能(束缚能)的研究就显得十分必要。采用有效质量近似(EMA)方法,提出新的比较简单的尝试波函数,并用变分法对ZnO量子点的激子基态能进行了计算。将计算结果与我们用固态热分解法制备的ZnO量子点的实验结果进行了比较,发现与实验结果非常吻合;与Y.Kayanuma的理论计算结果进行了比较,二者的计算结果也基本一致。说明选取的尝试波函数简单有效,可用于计算其他半导体量子点材料,具有一定的实用价值。 相似文献
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This paper reports the induced growth of high quality ZnO thin film
by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by
solid-state pyrolytic reaction, then by taking crystallized
amorphous ZnO as seeds (buffer layer), ZnO thin films have been
grown in diethyene glycol solution of zinc acetate at 80℃. X-ray
Diffraction curve indicates that the films were preferentially
oriented [001] out-of-plane direction of the ZnO. Atomic force
microscopy and scanning electron microscopy were used to evaluate
the surface morphology of the ZnO thin film. Photoluminescence
spectrum exhibits a strong ultraviolet emission while the visible
emission is very weak. The results indicate that high quality ZnO
thin film was obtained. 相似文献