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Magnetic and transport properties of Er_{1-x}Sm_xMn_6Ge_6(x=0.2-1.0) have been investigated by x-ray diffraction (XRD) and magnetization measurement. Analysis of the XRD patterns indicates that the samples with x≤0.4 mainly consist of HfFe_6Ge_6-type phase and the samples with 0.6≤x≤1.0 mainly consist of YCo_6Ge_6-type phase (P6/mmm). The lattice constants and the unit cell volume increase with increasing Sm content. The antiferro-ferri-ferromagnetic transitions can be observed with increasing Sm content. The samples with x=0.2 and 0.4 order antiferromagnetically at 420 and 425K, respectively. The samples with x=0.6, 0.8 and 1.0 order from ferri- to ferromagnetically over the whole magnetic ordering temperature range. The corresponding Curie temperatures are 435, 441 and 446K, respectively. The magnetoresistance (MR) isotherms of the sample with x=0.8, measured at various temperatures, are analysed. The magnitude of MR is found to be positive below 55K and gradually increases to a relatively large value of about 5.02% at 5K in a field of 5T as the temperature is lowered. A possible explanation for the positive MR is given. 相似文献
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Using x-ray diffraction and magnetic measurements, we have studied the structural and magnetic properties of Dy2Co17-xMnx (x=0∽5) compounds with a rhombohedral Th2Zn17-type structure. With an increasing Mn concentration x, the unit-cell volume V was found to increase linearly. The Curie temperature Tc decreases linearly, and the saturation magnetization Ms at 5K first increases slightly for x<1, then decreases rapidly for x>1 with a further increase of Mn concentration x. In compounds for x=1~3, a spin reorientation was found. A magnetic diagram of the compounds is given. 相似文献
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A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV. 相似文献
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The magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0-1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0-5 T). Compounds with x=0.4-1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0-0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1-0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0-1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4-1) decreases, while the ordering points of the compounds (x=0-1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%. 相似文献
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研究了NaZn13型结构LaFe13-xAlxC0.1(x=1.6,1.8)间隙化合物的磁制冷能力和磁相变.利用麦克斯韦关系式计算得到,高Al含量LaFe13-xAlx碳化物的最大磁熵变值|ΔS|m低于低Al含量碳化物的最大磁熵变值.随Al含量的增加,化合物的磁熵变峰展宽,但由于磁熵变大幅降低,衡量磁制冷能力的q值随之降低.基于朗道相变原理,考虑到自旋涨落的影响,磁自由能可以展开到磁化强度的6次方项,材料的相变类型由磁化强度的4次方项系数a3(T)的符号来进行判断.随着Al含量的增加,研究的碳化物相变由弱的一级相变转为二级相变.
关键词:
13-xAlx碳化物')" href="#">LaFe13-xAlx碳化物
磁制冷能力
磁相变 相似文献
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研究了NaZn13型结构LaFe13-xAlxC0.1(x=1.6,1.8)间隙化合物的磁制冷能力和磁相变.利用麦克斯韦关系式计算得到,高Al含量LaFe13-xAlx碳化物的最大磁熵变值|ΔS|m低于低Al含量碳化物的最大磁熵变值.随Al含量的增加,化合物的磁熵变峰展宽,但由于磁熵变大幅降低,衡量磁制冷能力的q值随之降低.基于朗道相变原理,考虑到自旋涨落的影响,磁自由能可以展开到磁化强度的6次方项,材料的相变类型由磁化强度的4次方项系数a3(T)的符号来进行判断.随着Al含量的增加,研究的碳化物相变由弱的一级相变转为二级相变. 相似文献
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Effect of charge order transition on tunneling resistance in Pr_(0.6)Ca_(0.4)MnO_3/Nb-doped SrTiO_3 heterojunction
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An oxide p–n heterojunction composed of Pr0.6Ca0.4MnO3film, with a charge order(CO) transition, and 1wt% Nbdoped SrTiO3substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference. 相似文献
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