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Semi-quantitative study on the Staebler--Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system 总被引:1,自引:0,他引:1 下载免费PDF全文
The method of numerical simulation is used to fit the relationship between
the photoconductivity in films and the illumination time. The generation and
process rule of kinds of different charged defect states during illumination
are revealed. It is found surprisingly that the initial photoconductivity
determines directly the total account of photoconductivity degradation of
sample. 相似文献
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高质量宽带隙立方氮化硼薄膜的研究进展 总被引:1,自引:0,他引:1
文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性 :(1)用射频溅射法在Si衬底上制备出立方相含量在 90 %以上 ,Eg>6 .0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 .这些高纯c -BN薄膜 ,可应用于制作各种半导体 (主要是高温、高频大功率 )电子器件 . 相似文献
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为了研究氢化非晶硅薄膜的稳定性,我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较,对样品还进行了热退火、热退火同时进行光诱导退火。同时,为了定量地分析光电导衰退,我们假设光电导衰退遵循扩展指数规律:1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β],这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示:TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性,同时还发现,光学带隙明显减小、荧光光谱显著地朝着低能方向移动。 相似文献
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2—氨基苯并噻唑萃取铑及铑,铱分离的研究 总被引:4,自引:0,他引:4
本文研究用2-氨基苯并噻唑(简写ABT)溶剂萃取铑的最佳条件,在KI存在下于pH1~3,加热60min,所形成的络合物能定量地被己烷萃取,贱金属离子如Fe^3+,Al^3+,Cu^2+,Cd^2+,Co^2+,Ni^2+,Zn^2+,Mn^2+,Ca^2+,Mg^2+及铂族离子Pt(Ⅳ),Ir(Ⅳ)不被萃取,Pd^2+,可在未加入KI之前预先萃取分离,斜率测得萃合物组成为RhI3(ABT),红外光 相似文献
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用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明,当反应气体中SiH4浓度在3.6%—50%之间大范围变化时,μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明,在SiH4浓度较大时制备的薄膜,其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH4气体高度分解,等离子体高度电离.
关键词:
微波电子回旋共振化学气相沉积
氢化微晶硅薄膜
拉曼散射
X射线衍射 相似文献
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Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results. 相似文献
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Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system 下载免费PDF全文
Intrinsic hydrogenated microcrystalline silicon (\muc-Si:H) films have
been prepared by hot-wire-assisted microwave electron-cyclotron-resonance
chemical vapour deposition (HW-MWECR-CVD) under different deposition
conditions. Fourier-transform infrared spectra and Raman spectra were
measured. Optical band gap was determined by Tauc plots, and experiments of
photo-induced degradation were performed. It was observed that hydrogen
dilution plays a more essential role than substrate temperature in
microcrystalline transformation at low temperatures. Crystalline volume
fraction and mean grain size in the films increase with the dilution
ratio (R=H2/(H2+SiH4)).
With the rise of crystallinity in the films, the optical band gap tends to
become narrower while the hydrogen content and photo-induced degradation
decrease dramatically. The samples, were identified as \mu c-Si:H films, by
calculating the optical band gap. It is considered that hydrogen dilution
has an effect on reducing the crystallization activation energy of the
material, which promotes the heterogeneous solid-state phase transition
characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the
needed structure can be prepared by balancing deposition and crystallization
through controlling process parameters. 相似文献
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