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简单介绍了文章作者在半导体硅重构表面及其相变动力学研究方面的进展.近期si(111)(7×7)-(1×1)相变的实验研究发现,将温度升高到相变温度以上时,7×7岛面积以恒定的衰减速率随时间减小至零,且初始面积越大的岛这个衰减速率就越大.文章作者分析了大量的实验事实,由此提出了一个双速相场模型来解释这个重要而令人困惑的现象.模型重点是:在相变过程中,7×7关键结构变化较快,随后的层错消解过程要慢得多.这个模型完美地解释了相关实验现象,说明该模型抓住了关键物理要素,这种相场方法也可以用于其他半导体表面相变研究.  相似文献   
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The magnetic properties and magnetization reversible processes of L1_0 FePt(3 nm)/Pb(Mg_(1/3)Nb_(2/3))O_3–PbTiO_3(PMN–PT) heterostructure were investigated by using the phase field model. The simulation results show that the magnetic coercivities and magnetic domains evolution in the L1_0 FePt thin film are significantly influenced by the compressive strains stemming from the polarization of single crystal PMN–PT substrate under an applied electric field. It is found that the magnetic coercivities increase with increasing of the compressive strain. A large compressive strain is beneficial to aligning the magnetic moments along the out-of-plane direction and to the enhancement of perpendicular magnetic anisotropy. The variations of magnetic energy densities show that when compressive strains are different at the magnetization reversible processes, the magnetic anisotropy energies and the magnetic exchange energies firstly increase and then decrease, the negative demagnetization energy peaks appear at coercivities fields, and the magnetoelastic energies are invariable at large external magnetic field with the energy maximum appearing at coercivities fields. The variations of the magnetoelastic energies bring about the perpendicular magnetic anisotropy so that the magnetoelastic energy is lower at the large external magnetic fields, whereas the appearance of magnetoelastic energy peaks is due to the magnetization-altered direction from the normal direction of the plane of the L1_0 FePt thin film at coercivities fields.  相似文献   
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徐野川  刘邦贵 《物理》2008,37(09):628-630
简单介绍了文章作者在半导体硅重构表面及其相变动力学研究方面的进展.近期Si(111) (7×7)-(1×1)相变的实验研究发现,将温度升高到相变温度以上时,7×7岛面积以恒定的衰减速率随时间减小至零,且初始面积越大的岛这个衰减速率就越大.文章作者分析了大量的实验事实,由此提出了一个双速相场模型来解释这个重要而令人困惑的现象.模型重点是:在相变过程中,7×7关键结构变化较快,随后的层错消解过程要慢得多.这个模型完美地解释了相关实验现象,说明该模型抓住了关键物理要素,这种相场方法也可以用于其他半导体表面相变研究.  相似文献   
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