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The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures
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AlGaN/GaN heterostructures on vicinal sapphire
substrates and just-oriented sapphire substrates (0001) are grown by
the metalorganic chemical vapor deposition method. Samples are studied
by high-resolution x-ray diffraction, atomic force microscopy,
capacitance--voltage measurement and the Van der Pauw Hall-effect
technique. The investigation reveals that better crystal quality and
surface morphology of the sample are obtained on the vicinal substrate.
Furthermore, the electrical properties are also improved when the sample
is grown on the vicinal substrate. This is due to the fact that the
use of vicinal substrate can promote the step-flow mode of
crystal growth, so many macro-steps are formed during crystal
growth, which causes a reduction of threading dislocations in the
crystal and an improvement in the electrical properties of the
AlGaN/GaN heterostructure. 相似文献
2.
在蓝宝石衬底上采用原子层淀积法制作了三种不同Al2O3介质层厚度的绝缘栅高电子迁移率晶体管.通过对三种器件的栅电容、栅泄漏电流、输出和转移特性的测试表明:随着Al2O3介质层厚度的增加,器件的栅控能力逐渐减弱,但是其栅泄漏电流明显降低,击穿电压相应提高.通过分析认为薄的绝缘层能够提供大的栅电容,因此其阈值电压较小,但是绝缘性能较差,并不能很好地抑制栅电流的泄漏;其次随着介质厚度的增加,可以对栅极施加更高的正偏压,因此获
关键词:
2O3')" href="#">Al2O3
金属氧化物半导体-高电子迁移率晶体管
介质层厚度
钝化 相似文献
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