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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers 下载免费PDF全文
Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iVoc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%. 相似文献
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采用磁控溅射法在Si衬底上制备了SiO2介质膜,系统地研究了SiO2膜引入对Ag纳米颗粒的表面覆盖率、形貌、形成机理和光学性质的影响.研究发现引入SiO2介质膜后,Ag纳米颗粒的表面覆盖率显著增加,平均粒径明显降低.基于现有的Ag纳米颗粒形成机理,提出了粗糙表面Ag膜断裂模型以解释其形貌发生变化的原因.紫外-可见光分光光度计测试表明,引入SiO2膜并优化其厚度,可使Ag纳米颗粒的偶极消光峰最大红移86nm,但消光峰强度明显下降.数值模拟计算表明,引入SiO2膜的Ag纳米颗粒所能散射的光子数量最小减少2×1018个.因此,在Si衬底上沉积SiO2膜,不利于Ag纳米颗粒陷光性能的提高. 相似文献
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