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1.
根据电荷通过低温量子导体时具有的二项分布导致散粒噪声这一结论,结合Landauer电流公式的物理内涵建立了相干介观系统中的散粒噪声模型,并通过Monte Carlo模拟方法产生了散粒噪声时间序列.介观系统中散粒噪声的抑制来源于电子输运时的相关性,传输本征值双峰分布导致量子混沌腔和无序金属中的散粒噪声抑制.根据这两个结论,通过Monte Carlo模拟定性地分析了传输本征值分布与电子输运相关性之间的关系.
关键词:
散粒噪声
Landauer公式
介观系统 相似文献
2.
基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更
关键词:
MOS结构
辐射
界面陷阱
氧化层陷阱 相似文献
3.
A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs 下载免费PDF全文
A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson's equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD. 相似文献
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5.
A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation 总被引:2,自引:0,他引:2 下载免费PDF全文
Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented, with which the dependence of Tc/Te (where Tc=capture time, Te=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement. 相似文献
6.
Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy--ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter-grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively. 相似文献
7.
基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型. 相似文献
8.
本文采用渐变沟道近似和准二维分析的方法, 通过求解泊松方程, 建立了应变Si NMOSFET阈值电压集约物理模型. 模型同时研究了短沟道, 窄沟道, 非均匀掺杂, 漏致势垒降低等物理效应对阈值电压的影响. 采用参数提取软件提取了阈值电压相关参数, 通过将模型的计算结果和实验结果进行对比分析, 验证了本文提出的模型的正确性. 该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考.
关键词:
应变Si NMOSFET
阈值电压
集约物理模型 相似文献
9.
将晶核析出的Avrami 方程应用于描述超大规模集成电路中金属Al薄膜互连电迁移过程中电阻的演变. 根据电子散射理论,晶界电阻主要起源于晶界处空位或者空洞对电子的散射. 为了描述这些离子的特征,引入了自由体积的概念,将晶界处电子散射这个复杂的过程简化用自由体积的有效散射截面来描述,从而建立了自由体积与电阻变化的定量关系,统一描述了电迁移过程中不同阶段的电阻变化. 数值模拟结果表明,在第一个空洞成核时刻电阻会发生急剧变化,这一结果已被实验所证实.
关键词:
电迁移
Al互连
电阻变化 相似文献
10.
This paper presents an accurate analytical model of the random telegraph signal(RTS) noise time-constant ratio(τc/τe) for RTS noise in nano-MOSFETs,in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account.Based on this new model,the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted.The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected. 相似文献