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Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique,which is based on H^ ions implantation,anodic bonding and layer transfer,Structures of the resulting thin film silicon on galss(SOG) are characterized by transmission-electron microscopy,scanning electron microscopy and Raman spectroscopy.The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality.The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates. 相似文献
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