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The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems. 相似文献
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The growth behavior of a columnar crystal in the convective undercooled melt affected by the far-field uniform flow is studied and the asymptotic solution for the interface evolution of the columnar crystal is derived by means of the asymptotic expansion method.The results obtained reveal that the far-field flow induces a significant change of the temperature around the columnar crystal and the convective flow caused by the far-field flow accelerates the growth velocity of the interface of the growing columnar crystal in the upstream direction and inhibits its growth velocity in the downstream direction.Our results are similar to the experimental data and numerical simulations. 相似文献
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