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以硅纳米孔柱阵列(Si-NPA)为衬底、用化学气相沉积法制备了具有规则阵列结构特征的ZnO/Si-NPA纳米复合体系,并对其结构和光致发光性质进行了表征. 实验结果显示,组成ZnO/Si-NPA表面阵列的每个柱子均呈现层壳结构. 不同于衬底Si-NPA的红光和蓝光发射,ZnO/Si-NPA在紫外光区和蓝绿光区呈现出两个强的宽发光峰. 分析表明,紫外光发射应归因于ZnO晶体的带边激子跃迁;而蓝绿光发射则来自于ZnO晶体本征缺陷所形成的两类深能级复合中心上载流子的辐射跃迁. 相似文献
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Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array
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Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique
silicon substrate with a hierarchical structure, silicon nanoporous
pillar array (Si-NPA), by using a vapour phase transport method. It
is found that as-grown ZnO film is composed of closely packed ZnO
crystallites with an average size of $\sim$10\,\mu$m. The film
resistivity of ZnO/Si-NPA is measured to be
$\sim$8.9\Omega\cdot$\,cm by the standard four probe method. The
lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured.
Theoretical analysis shows that the carrier transport across
ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a
thermionic process at high voltages and a quantum tunnelling process
at low voltages. 相似文献
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