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The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer–bilayer–monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer–Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment. 相似文献
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Disorder inevitably exists in realistic samples,manifesting itself in various exotic properties for the topological states.In this paper,we summarize and briefly review the work completed over the last few years,including our own,regarding recent developments in several topics about disorder effects in topological states.For weak disorder,the robustness of topological states is demonstrated,especially for both quantum spin Hall states with Z_2 = 1 and size induced nontrivial topological insulators with Z_2 = 0.For moderate disorder,by increasing the randomness of both the impurity distribution and the impurity induced potential,the topological insulator states can be created from normal metallic or insulating states.These phenomena and their mechanisms are summarized.For strong disorder,the disorder causes a metal-insulator transition.Due to their topological nature,the phase diagrams are much richer in topological state systems.Finally,the trends in these areas of disorder research are discussed. 相似文献
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