DMFCs用磺化聚醚醚酮/功能化二氧化硅复合质子交换膜

在磺化度(DS)为55.1%的磺化聚醚醚酮(SPEEK)中掺杂功能化二氧化硅(吸湿性SiO2溶胶及带有磺酸基团的二氧化硅(SiOx-S)粒子)制备SPEEK/SiO2和SPEEK/SiOx-S复合质子交换膜.SiO2和SiOx-S的掺杂能有效提高复合膜的抗溶胀、阻醇性能及高温低湿情况下的电导率.纯SPEEK膜在80℃溶胀为52.6%,而SiO2和SiOx-S掺杂量为15%的复合膜在此温度下分别仅有26.2%和27.3%的溶胀.在室温至80℃范围内,SPEEK/SiO2(20 wt%)和SPEEK/SiOx-S(20 wt%)复合膜的甲醇透过系数比Nafion115膜小近2个数量级.在120℃、相对湿度(RH)为40%情况下,SPEEK纯膜的电导率仅为2.6×10-4S.cm-1,SPEEK/SiO2(20 wt%)复合膜约为2.0×10-3S.cm-1,而SPEEK/SiOx-S(20 wt%)复合膜高达1.0×10-2S.cm-1,与Nafion115相当.SPEEK/SiO2(20 wt%)和SPEEK/SiOx-S(20 wt%)2种复合膜的尺寸稳定性较高,膜电极无催化剂与膜分离现象,其DMFCs单电池性能好于SPEEK膜.     

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

We report on the Au-assisted vapour-liquid-solid （VLS） growth of GaAs/InxGal xAs/GaAs （0.2 ≤ x ≤1） axial double-heterostructure nanowires on GaAs （ 111 ） B substrates via the metal-organic chemical vapor deposition （MOCVD） technique. The influence of the indium （In） content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGal xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.     

Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate

Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.     

Growth and characterization of GaAs/In_χGa_(1-χ)As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces

We report on the Au-assisted vapour-liquid-solid(VLS) growth of GaAs/InxGa1-xAs/GaAs(0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs(111) B substrates via the metal-organic chemical vapor deposition(MOCVD) technique.The influence of the indium(In) content in an Au particle on the morphology of nanowires is investigated systematically.A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment,coupled with a group III precursor interruption,is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section.The nanowire morphology,such as kinking and tapering,are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.     

Mie谐振耦合的亚波长金属孔宽带高透射传输

表面等离激元共振激发的亚波长金属孔透射较Bethe理论有大幅度的提高,然而,由于共振对频率的敏感性以及金属在光频的高损耗特性,表面等离激元共振难以实现亚波长金属孔的宽带高透射传输.本文采用放置在金属孔两边的硅纳米颗粒的Mie谐振耦合取代表面等离激元共振,实现亚波长金属孔的宽带高透射传输.全波仿真结果表明,采用Mie谐振耦合的亚波长金属孔(r/λ=0.1)光传输,透射系数超过90%的带宽达到65 nm,与表面等离激元共振诱导的透射增强相比,峰值增高了1.5倍,3 dB带宽拓宽了17倍.根据耦合模理论,建立了Mie谐振耦合亚波长金属孔透射的等效电路模型,并在临界耦合状态下反演出电路模型中的元件参数值.进一步研究发现,仅通过改变等效电路模型中的耦合系数,就可全面揭示Mie谐振耦合亚波长金属孔透射的传输规律,并得到与全波电磁仿真完全一致的结果,从而找到光与放置硅纳米颗粒的亚波长金属孔相互作用的数学表达,也给予人们在光学领域按照电路设计方法构建相应功能模块的启示.     

用瑞利散射研究聚氯乙烯/橡胶共混物的两相分布

用瑞利散射研究聚氯乙烯/橡胶共混物两相尺寸,测定了聚氯乙烯/顺丁橡胶和聚氯乙烯/丁睛橡胶共混物的V_v光散射强度,用Debys——Bueche方程计算了相关距离a_c,讨论了a_c的变化规律。