Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

In this study, a low-temperature annealed ohmic contact process was proposed on Al Ga N/Ga N heterostructure field effect transistors(HFETs) with the assistance of inductively coupled plasma(ICP) surface treatment. The effect of ICP treatment process on the 2DEG channel as well as the formation mechanism of the low annealing temperature ohmic contact was investigated. An appropriate residual Al Ga N thickness and a plasma-induced damage are considered to contribute to the low-temperature annealed ohmic contact. By using a single Al layer to replace the conventional Ti/Al stacks, ohmic contact with a contact resistance of 0.35 ?·mm was obtained when annealed at 575?C for 3 min. Good ohmic contact was also obtained by annealing at 500?C for 20 min.     

共振离子化质谱在高纯材料表面杂质分析中的应用

用激光熔出－共振离子化质谱法测定纯铁中及高纯硅片表面的铬。测定含有１０１２原子／ｃｍ２Ｃｒ的信号强度表明本方法可测定低至１０９原子／ｃｍ２的样品，其空间分辨率为０．２ｍｍ，还可进行二维杂质元素分析。     

江先生を悼んで

正江先生は、私ども三洋化成工業とは、大変古くからのおつき合いです。弊社OBの鯉塚元専務と大阪大学でご学友であったご縁で、弊社の研究活動に共同研究というかたちでご協力いただいたり、優秀な学生をご推薦いただいたり、本当にご尽力いただきました。江先生との共同研究はかれこれ20     

用差动变压器测定杨氏弹性模量的方法

以前测定杨氏弹性模量的实验,都是采用伊文(Ewing)装置,方法是先用光杠杆来测定由于加重物引起的金属棒的挠度,然后再来求出杨氏模量。这种方法虽然灵敏度很高,但是由于光杠杆对振动很敏感,装置中的标尺、望远镜等部件调节起来也很费力,要求轻、稳、慢,实验操作起来相当麻烦。 这里介绍的用电学方法测定挠度,具有精度高、容易制作、可连继记录等优点。对于大学低年级学生何参考价值,我们在此作一简单介绍。 一、实验装置 测定位移系统的方块图如图1所示。它是把低频发生器的输出作为差动变压器的输入电压,差动变压器输出经过放大、整流以后…     

PIEZOELECTRIC Pb(Zr, Ti)O3 MICRO-DEVICES FOR SCANNING FORCE MICROSCOPY AND ULTRA-DENSITY DATA STORAGE

In this paper we report two types of micro devices based on Pb(Zr, Ti)O₃ (PZT) thin films for improving the throughput of scanning force microscopy (SFM) or data storage using SFM. One is a piezoelectric cantilever array integrated with force sensor as well as z-actuator on each cantilever for parallel operation. The 125-μm-long PZT micro cantilever with a natural resonant frequency of 189 kHz has a high actuation sensitivity of 75 nm/V. Independent parallel images using two cantilevers of the array were obtained. The other is a novel micro-SFM device that is expected to replace the cantilever, the deflection detection unit, and the macro-fabricated scanner which is the bottle neck limiting the single probe acquisition rate. The bridge-structured device has shown a microscopy sensitivity of 0.32 nA/nm in vertical direction and actuation abilities of 70-80nm/±V in the lateral direction.