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高输出功率和长期可靠性是高功率半导体激光器得以广泛应用的前提,但高功率密度下腔面退化导致的光学灾变损伤(COD)制约了激光器的最大输出功率和可靠性。为了提高915 nm InGaAsP/GaAsP半导体激光器的COD阈值,利用金属有机物化学气相沉积设备来外延生长初次样片。探讨了量子阱混杂对初次外延片发光的影响。此外,使用光致发光谱测量了波峰蓝移量和发光强度。实验结果表明,在退火温度为890℃、退火时间为10 min条件下,波峰蓝移量达到了62.5 nm。对初次外延片进行量子阱混杂可得到较大的波峰蓝移量,且在退火温度为800~890℃、退火时间为10 min的条件下峰值强度均保持在原样片峰值强度的75%以上。 相似文献
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808-nm fiber coupled module with a CW output power up to 130 W 总被引:1,自引:0,他引:1
A fiber coupled module is fabricated with integrating the emitting light from four laser diode bars into multimode fiber bundle.The continuous wave(CW)output power of the module is about 130 W with a coupling efficiency of around 80%.The output power is very stable after the temperature cycling and vibration test.No apparent power decrease has been observed as the device working continuously for 500 h. 相似文献
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The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580℃. When the blue shift was 24.7 meV at 480℃, the COD power for the window LD was 86.7% higher than the conventional LD. 相似文献
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利用电致发光(EL)的方法,研究了突然失效的975 nm大功率应变量子阱激光器。起初,我们以为激光器失效是由于腔面发生了突然光学灾变(COMD)。然而,通过EL实验,发现其中一部分激光器腔面没有任何损伤,而内部发生了突然光学灾变(COBD),为工艺的进一步改善指明了方向。对90只发生COD的激光器进行EL成像,发现暗线缺陷(DLD)起始于腔面或是激光器内部。DLD是严重的非辐射复合区,通常沿着有源区延伸出几个分支,造成激光器功率急剧下降。详细分析了不同COD模式的特征并进行了对比。并进一步分析了两种典型COD模式发生的原因,然后给出了抑制COD和提高大功率半导体激光器性能的建议。 相似文献
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采用高电流注入条件下的载流子扩散方程和复折射率波导模型情况下的亥姆霍兹方程,对980 nm高功率激光二极管外延材料的非对称和对称波导结构的光吸收损耗进行了理论计算。采用低压金属有机化学气相外延技术制备了两种波导结构的外延材料,并制作了激光器件,进行了光电特性测试和对比分析。理论计算和实验结果表明:与对称波导结构相比,非对称波导结构外延材料并未减小光吸收损耗,而是减小了串联电阻,因而降低了器件的焦耳热损耗,从而提高器件的电光效率。 相似文献