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The dispersion relations of the surface polariton in a semi-infinite wire medium with spatial dispersion are analysed. In comparison with the traditional spatial dispersive medium there only exists one branch instead of multibranch for the dispersion curve. The possibility of the experimentally observing the surface polaritons by attenuated total reflection is simulated numerically. 相似文献
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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology 下载免费PDF全文
Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS. 相似文献
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Parasitic bipolar amplification in a single event transient and its temperature dependence 下载免费PDF全文
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor. 相似文献
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We present a theoretical study of the energy levels with two-dimensional ring confining potential in the presence of the Rashba spin-orbit interaction. The features of some low-lying states in various strengths of the Rashba spin-orbit interaction are investigated. The Rashba spin-orbit splitting can a/so be influenced by the width of the potential barrier. The computed results show that the spin-polarized electronic states can be more easily achieved in a weakly confined dot when the confinement strength for the Rashba spin-orbit interaction is larger than a critical value. 相似文献
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We investigate the dynamic characteristics of metamaterial systems, such as the temporal coherence gain of the superlens, the causality limitation on the ideal cloaking systems, the relaxation process and essential elements in the dispersive cloaking systems, and the extending of the working frequency range of cloaking systems. The key point of our study is the physical dispersive properties of metamaterials, which are well-known to be intrinsically strongly dispersive. With physical dispersion, new physical pictures can be obtained for the waves propagating inside metamaterial, such as the “group retarded time” for waves inside the superlens and cloak, the causality limitation on real metamaterial systems, and the essential elements for design optimization. Therefore, we believe the dynamic study of metamaterials will be an important direction for further research. All theoretical derivations and conclusions are demonstrated by powerful finite-difference time-domain simulations. 相似文献
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对于带电粒子在磁场中的运动,在各种教科书上都有详细的阐述,但是对于限制在二维无限深势阱的带电粒子,现在流行的各种量子力学教科书上都没有阐述.本文主要讨论二维无限深势阱中的能级和朗道能级. 相似文献
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Bound and Resonant States of the Hulthén Potential Investigated by Using the Complex Scaling Method with the Oscillator Basis 下载免费PDF全文
Bound and resonant states of the Hulthén potential are studied. The complex scaling method is used to achieve the energy spectrum. The oscillator basis is used to expand the radial wave function. Conforming to the standard feature of the complex scaling method, the bound energies do not change and the continuums change with the rotational angle. With tables and graphs, the interesting properties of the energy spectrum for various physical parameters are presented. The Gauss quadrature integral approximation is used to deal with the potential integral term. 相似文献