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EFFECT OF ATOMIC HYDROGEN ON THE ACETYLENE-ADSORBED Si(100)(2×1) SURFACE AT ROOM TEMPERATURE 下载免费PDF全文
High resolution electron energy loss spectroscopy, low energy electron diffraction and quadrupole maas spectrometer (QMS) have been employed to study the effect of atomic hydrogen on the acetylene-saturated pre-adsorbed Si(100)(2×1) surface and the surface phase transition at room temperature. It is evident that the atomic hydrogen has a strong effect on the adsorbed C2H2 and the underlying surface structure of Si. The experimental results show that CH and CH2 radicals co-exist on the Si surface after the dosing of atomic hydrogen; meanwhile, the surface structure changes from Si(100)(2×1) to a dominant of (1×1). These results indicate that the atomic hydrogen can open C=C double bonds and change them into C-C single bonds, transfer the adsorbed C2H2 to C2Hx(x = 3,4) and break the underlying Si-Si dimer, but it cannot break the C-C bond intensively. The QMS results show that some C4 species axe formed during the dosing of atomic hydrogen. It may be the result of atomic hydrogen abstraction from C2Hx which leads to carbon catenation between two adjacent C-C directs. The C4 species formed are stable on Si(100) surfaces up to 1100 K, and can be regarded as the potential host of diamond nucleation. 相似文献
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用高分辨率电子能量损失谱方法研究了原子 H 与被 C2 H2 吸附的 Si(100) 界面的相互作用.结果显示,在 Si(100) 界面上, Si— Si 二聚化键和 C2 H2 中的 C— C 键被 H 原子打开,它们分别形成 Si— H, C— H 键.用 A M1 量子化学方法,计算了 C2 H2 和 C2 H4 在 Si(100) 上的吸附结构,指出了 C2 H2 在 Si(100) 上的吸附位置,进一步讨论了金刚石在 Si 异质外延初始阶段的形核机制.计算结果显示:在原子 H 的作用下,可以显著地降低反应的活化能,有利于 C H3 的产生和 C H3 向 Si 衬底的键连.计算结果与实验相符合. 相似文献
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Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system 下载免费PDF全文
Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system.The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described.In order to increase the density of diamond nuclei on the wafers,it is not necessary to use negative bias.The UV-light pre-treatment is not beneficial for improving the diamond nucleation.The multi-layers of C60 molecules,but not a monolayer,can increase the density of diamond nuclei in the presence of H atoms. 相似文献
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本文由粘滞系数的时间关联函数表达式,得到了实验观察到的现象:在液晶N相→S_A相转变点附近(T→T_s_A),体粘滞系数的反常发散比切变粘滞系数反常发散要大得多。说明了Brochard等人的理论中,不能解释此实验的原因。 相似文献
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本文由粘滞系数的时间关联函数表达式,得到了实验观察到的现象:在液晶N相→SA相转变点附近(T→T(sA)),体粘滞系数的反常发散比切变粘滞系数反常发散要大得多。说明了Brochard等人的理论中,不能解释此实验的原因。
关键词: 相似文献
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本文就光学参量振荡和激光两个物理问题,讨论了非平衡态相变过程的动力特点。相变点是由稳定结点状态突变到鞍点时的转变点。说明了涨落和耗散在相变中所起的作用,得到第二类相变的临界指数(β=1/2,γ=1)。
关键词: 相似文献