一类含时滞的反应扩散方程的周期解和概周期解

本文研究一类含时滞的反应扩散方程和方程组.应用单调方法得到了这类方程存在周期解和概周期解一些充分条件.     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

Multiparty Quantum Secret Sharing of Key Using Practical Faint Laser Pulses

Based on a bidirectional quantum key distribution protocol [Phys. Rev. A 70 (2004)012311], we propose a (m-1, m-1)-threshold scheme of m (m≥3)-party quantum secret sharing of key by using practical faint laser pulses. In our scheme, if all the m-1 sharers collaborate, they can obtain the joint secret key from the message sender. Our scheme is more feasible according to the present-day technology.     

线状锗等离子体X射线线谱的时间分辨测量

用自行研制的X射线条纹晶体谱仪首次测量了线状锗等离子体的X射线时间分辨谱。给出了类Ne-锗L线共振线的时间演化过程,并用类Ne-锗L线共振线与其双电子俘获伴线的相对强度比粗估了锗等离子体的电子温度及其随时间的变化,实验给出了X光激光增益区介质的电子温度为400～760eV,同时给出了电子温度保持相对恒定的时间不小于90ps(电子温度变化小于2％)。     

n次乘、开方去9余数验算法

求相同因数乘积的运算叫做乘方;求一个数方根的运算叫做开方。乘方与开方运算可用珠算,亦可用笔算,但运算过程比较烦琐,稍不当心就容易出错,因此答数需要检查,而检查的方式往往复算,甚至多次复算,这是非常乏味的。现介绍一种简捷的"去9余数验算法",不论是多少次乘、开方运算,只要按此法验算,     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

光纤探头式分光光度计在丙酮碘化反应动力学研究中的应用

丙酮的碘化反应——作为复杂反应的一个例子,是研究化学反应动力学时常被选用的一个物理化学实验。在该实验中,常用72型分光光度计通过间歇取样的方法,测出不同反应时刻反应物碘的浓度,经作图计算求得反应的速度常数。显然这种方法既费时又麻烦,且误差也较大。近几年来,光纤传感器的出现为我们提供了一种快速简便,可连续进行测量的分析     

An Electro—Optical Modulator Based on GeO2—Doped Silica Ridge Waveguides with Thermal Poling

A Mach-Zehnder electro-optic modulator is designed and fabricated based on upper-clad GeO2-doped silica ridge waveguides with thermal poling.The electro-optic coefficient obtained is about 0.05pm/V and is polarizationinsensitive.An extinction ratio of over 17dB is achieved.The transmission loss of the modulator for the TE mode is 2-3dB higher than that for the TM mode after the poling.