Monte Carlo方法研究低能电子束曝光沉积能分布规律

建立一个描述低能电子在多元多层介质中散射的物理模型,运用MonteCarlo方法模拟低能电子在靶体胶衬底中的复杂散射过程,在此基础上通过大量计算研究入射束能、胶层厚度、衬底材料等不同曝光条件对抗蚀剂沉积能密度分布的影响,获得沉积能分布规律:适量的低束能、薄胶层、低原子序数衬底可以使前散射电子对胶中沉积能密度分布的贡献增大、背散射电子的贡献减小,从而提高曝光分辨率. 关键词： 电子束曝光 MonteCarlo方法 低能电子散射 能量沉积     

Simulation of plasma doping process by using the localized molecular dynamics method

Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.     

Vertical assembly of carbon nanotubes for via interconnects

The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.     

磁性Pb(Ⅱ)表面印迹聚合物(Fe_3O_4/GO-IIP)的制备及谱学表征

吸附法处理含铅废水因其经济性备受关注。开发可回收的专一性Pb(Ⅱ)吸附材料是高效处理含铅废水和实现铅回收的关键。结合氧化石墨烯(GO)的强吸附性、Fe_3O_4的磁性和表面印迹技术,以氧化石墨烯负载四氧化三铁(Fe_3O_4/GO)为载体,硝酸铅为模板离子,甲基丙烯酸(MAA)及水杨醛肟(SALO)为功能单体,乙二醇二甲基丙烯酸酯(EGDMA)为交联剂制备了磁性Pb(Ⅱ)表面印迹材料(Fe_3O_4/GO-IIP),并探讨其重复利用性和对Pb(Ⅱ)的专一性吸附性。结合XRD,SEM,FTIR等谱学方法,对Fe_3O_4/GO-IIP进行表征,并分析其对Pb(Ⅱ)的吸附机理。以Fe_3O_4/GO-IIP作为吸附剂选择性去除水溶液中的Pb(Ⅱ),结果表明,Fe_3O_4/GO-IIP对Pb(Ⅱ)具有很好的亲和性,反应在5min内,对初始浓度10mg·L-1的Pb(NO3)2的去除率达到70%,反应在20min左右达到吸附平衡。准二级吸附动力学和Langmuir吸附等温线能较好的表达其吸附过程。TEM和SEM图谱证明了Fe_3O_4均匀地分散在GO表面,粒径为10~20nm,Fe_3O_4/GO-IIP表面存在Pb(Ⅱ)印迹孔穴,增强其对Pb(Ⅱ)的选择吸附性;在竞争离子[Cd(Ⅱ),Zn(Ⅱ),Cu(Ⅱ)]存在条件下,Fe_3O_4/GO-IIP对目标污染物Pb(Ⅱ)的选择性系数比非印迹吸附材料(NIP)提高2~5倍;XRD和FTIR谱图分别从晶相结构和官能团证明了Fe_3O_4/GO-IIP的成功合成。对制备材料进行磁分离后洗脱再利用,结果表明Fe_3O_4/GO-IIP具有良好的重复利用性。该结果对于含铅废水处理和铅回收具有重要的意义。     

氧化石墨烯负载纳米零价铁(rGO-nZⅥ)去除地下水中Cr(Ⅵ)的XPS谱学表征

纳米铁广泛用于水中重金属离子的去除,但由于其易团聚的特性,在地下水中迁移性差,使其修复效果降低。氧化石墨烯具有吸附重金属的作用,但由于其表面带有负电荷,对带负电的高价铬(Cr_2O_7~(2-),CrO_4~(2-))吸附作用较弱。以氧化石墨烯(GO)为载体,采用液相还原法制备的氧化石墨烯负载纳米铁(rGO-nZⅥ),在改善纳米铁的分散性的同时,利用nZⅥ将带负电的高价铬(Cr_2O_7~(2-),CrO_4~(2-))还原为带正电的三价铬(Cr~(3+)),增强了氧化石墨烯对其吸附的性能。利用XRD和TEM对制备的rGO-nZⅥ进行表征,表明制备的rGO-nZⅥ近似球形,粒径为20~100nm;零价铁负载在GO表面。应用rGO-nZⅥ处理Cr(Ⅵ)污染的地下水,Cr(Ⅵ)的去除效率可达到100%,材料的最佳投加量与Cr(Ⅵ)浓度呈线性正相关。采用X光电子能谱(XPS)分析铬和铁的存在形态,并通过XPAPEAK41分峰后证实,Cr(Ⅵ)首先被还原为Cr(Ⅲ),进而生成Cr(OH)3吸附到材料表面。由XPS图看出,经24h反应,69.8%的Cr(Ⅵ)转化为Cr(Ⅲ)吸附到材料表面,此时仍具有Fe0的峰,证实材料具有很强的还原吸附铬的能力,且仍具有缓慢释放电子的能力,有利于后续长时间的修复。该结果对于利用rGO-nZⅥ处理地下水Cr(Ⅵ)污染具有重要的理论意义和实用价值。     

Radio-frequency transistors from millimeter-scale graphene domains

Graphene is a new promising candidate for application in radio-frequency(RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently,much progress has been made in the graphene-based RF field-effect transistors(RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm,respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.