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First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors: BxGa1-xAs and TlxGa1-xAs alloys 下载免费PDF全文
We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible. 相似文献
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We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO2 mask on the thermal stress are studied. It is found that the SiO2 mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO2 mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates. 相似文献
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A Fully Vectorial Effective Index Method for Accurate Dispersion Calculation of Photonic Crystal Fibres 下载免费PDF全文
A fully vectorial effective index method is developed for accurate dispersion calculation of photonic crystal fibres (PCFs). In order to improve the accuracy of the model, different values for the effective core radius are used when PCFs have different fibre parameters. The accuracy of our approach is demonstrated by comparing our results with other numerical and experimental results reported in literature. It is found that the accuracy of the fully vectorial effective index method is improved and our results agree well with accurate numerical results obtained by other methods as well as the previously reported experimental data. 相似文献
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利用无催化选区金属有机化学气相沉积(SA-MOCVD)法在GaAs(111)B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构.系统地研究了生长条件对GaAs纳米线生长的影响.实验结果显示,GaAs纳米线的形貌和长度依赖于生长温度、AsH3的分压以及SiO2掩膜表面的圆孔直径.因此可以通过调节以上因素来得到高质量的GaAs纳米线.并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理.微区光致发光谱(μ-PL)表明,GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成,室温(300 K)下它的发光波长为913 nm.这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值. 相似文献
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A novel microstructure fiber (MF) structure is proposed for broadband dispersion compensation. Through manipulating the four air-hole parameters and the pitch, the broad band dispersion compensation MF can be efficiently designed. The newly designed MF could compensate (to within 0.8%) the dispersion of 101 times of its length of standard single mode fiber over the entire 100-nm band centered on 1550 nm. The proposed design has been simulated through the finite difference beam propagation method, and the corresponding design procedures are also presented. 相似文献
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利用高非线性光子晶体光纤中的自相位调制效应产生的超连续谱,理论上推导了超窄脉冲信号的再生机制。分别从频域和时域上形象的解释了脉冲再生的原理,该本再生方法可以适用于OTDM的信号再生。实验上对劣化了的脉冲宽度为1.7ps的携带信息的超窄脉冲信号进行了再生,再生之后的信号峰值均衡,消光比达到了15dB。再生前信号中心波长是1548.2nm,重复频率是9.96872GHz。实验中,在1554nm—1570nm和1530nm—1543nm范围内都可以得到10dB以上的再生质量。同时拟合了信号峰值功率和波长关系,得到的曲线和超连续谱曲线相吻合。 相似文献
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为了简化和改善光载无线通信系统,提出了一种光探测器偏压调制技术,利用PIN光探测器(PIN-PD)和单行载流子光探测器(UTC-PD)的输出光电流随偏压变化的特性进行调制.采用光探测器偏置调制技术,光电探测和调制可以在一个光探测器上同时实现.研究表明当入射光功率为2.93dBm时,PIN-PD在10GHz射频副载波上的调制带宽为800 MHz,UTC-PD在150GHz射频副载波上的调制带宽为18.75GHz.调制带宽随入射光功率的增大而增大,当入射光功率为12.93dBm时,UTC-PD在150GHz射频副载波上的调制带宽可达25GHz.调制深度与正弦偏压调制信号的最小值有关. 相似文献