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Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films. 相似文献
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用简单的物理模型解释了面心立方晶体的泊松比v110负的原因。指出了其两种泊松比v110和v001的数值的理论联系。实验结果和理论符合较好。
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