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Heavily C-doped GaAs films, grown by metalorganic chemical vapor deposition with CCl4 as external carbon source, have been studied by Hall-effect measurements, high-resolution double-crystal X-ray diffraction, and secondary-ion-mass spectroscopy (SIMS). Comparison among X-ray diffraction and Hall-effect measurements and SIMS results indicates that carbon is preferentially incorporated as acceptor on As lattice sites and electrical activation rate achieves 100%. There is no evidence of carbon incorporated on Ga sites as donors and incorporated on interstitial lattice sites. 相似文献
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ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS 下载免费PDF全文
An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined. 相似文献
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