首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   317篇
  免费   9篇
  国内免费   1篇
化学   197篇
力学   2篇
数学   64篇
物理学   64篇
  2023年   2篇
  2022年   2篇
  2021年   6篇
  2020年   5篇
  2019年   8篇
  2018年   3篇
  2016年   8篇
  2015年   6篇
  2014年   10篇
  2013年   6篇
  2012年   20篇
  2011年   35篇
  2010年   11篇
  2009年   7篇
  2008年   17篇
  2007年   18篇
  2006年   22篇
  2005年   17篇
  2004年   10篇
  2003年   17篇
  2002年   10篇
  2001年   5篇
  2000年   3篇
  1999年   5篇
  1997年   3篇
  1996年   2篇
  1995年   5篇
  1994年   6篇
  1991年   3篇
  1990年   2篇
  1985年   4篇
  1984年   2篇
  1981年   3篇
  1979年   2篇
  1978年   3篇
  1973年   2篇
  1972年   2篇
  1955年   2篇
  1947年   1篇
  1940年   1篇
  1939年   1篇
  1936年   2篇
  1934年   1篇
  1933年   2篇
  1929年   1篇
  1927年   1篇
  1925年   2篇
  1924年   2篇
  1923年   1篇
  1922年   1篇
排序方式: 共有327条查询结果,搜索用时 15 毫秒
1.
Measurements of the forward-backward production asymmetry of heavy quarks in Z decays provide a precise determination of . The asymmetries are sensitive to QCD effects, in particular hard gluon radiation. In this paper QCD corrections for and are discussed. The interplay between the experimental techniques used to measure the asymmetries and the QCD effects is investigated using simulated events. A procedure to estimate the correction needed for experimental measurements is proposed, and some specific examples are given. Received: 26 February 1998 / Published online: 2 June 1998  相似文献   
2.
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.  相似文献   
3.
4.
A "sandwich" type polyoxometalate catalyst ([MeN(n-C8H17)3]12[WZn3(ZnW9O34)2]) was very efficiently recycled by nanofiltration with almost quantitative retention, using an alpha-alumina supported mesoporous gamma-alumina membrane.  相似文献   
5.
Chemical reactions in a dielectric barrier discharge at medium pressure of 250-300 mbar have been studied in CH(4)/Ar and CH(4)/N(2) gas mixtures by means of mass spectrometry. The main reaction scheme is production of H(2) by fragmentation of CH(4), but also production of higher order hydrocarbon molecules such as C(n)H(m) with n up to 9 including formation of different functional CN groups is observed. Formation of C(2)H(2), C(2)H(4), and C(2)H(6) molecules has been investigated in some detail. Significant differences are noted in comparison to a theoretical estimate.  相似文献   
6.
Ag and Ru nanoparticles stabilized by H5PV2Mo10O40, prepared by a sequence of redox reactions and supported on alpha-alumina, were effective catalysts for the direct aerobic epoxidation of alkenes in the liquid phase.  相似文献   
7.
8.
The epoxidation of allylic alcohols is shown to be efficiently and selectively catalyzed by the oxidatively resistant sandwich-type polyoxometalates, POMs, namely [WZnM(2)(ZnW(9)O(34))(2)](q)(-) [M = OV(IV), Mn(II), Ru(III), Fe(III), Pd(II), Pt(II), Zn(II); q = 10-12], with organic hydroperoxides as oxygen source. Conspicuous is the fact that the nature of the transition metal M in the central ring of polyoxometalate affects significantly the reactivity, chemoselectivity, regioselectivity, and stereoselectivity of the allylic alcohol epoxidation. For the first time, it is demonstrated that the oxovanadium(IV)-substituted POM, namely [ZnW(VO)(2)(ZnW(9)O(34))(2)](12-), is a highly chemoselective, regioselective, and also stereoselective catalyst for the clean epoxidation of allylic alcohols. A high enantioselectivity (er values up to 95:5) has been achieved with [ZnW(VO)(2)(ZnW(9)O(34))(2)](12)(-) and the sterically demanding TADOOL-derived hydroperoxide TADOOH as regenerative chiral oxygen source. Thus, a POM-catalyzed asymmetric epoxidation of excellent catalytic efficiency (up to 42 000 TON) has been made available for the development of sustainable oxidation processes. The high reactivity and selectivity of this unprecedented oxygen-transfer process are mechanistically rationalized in terms of a peroxy-type vanadium(V) template.  相似文献   
9.
Iodination of arenes was carried out by reacting 1 equiv of arene substrate with 0.5 equiv of iodine under an oxygen atmosphere with H5PV2Mo10O40 as oxidation catalyst. The synthesis is an inherently waste-free method for the preparation of iodoarenes.  相似文献   
10.
We have demonstrated that a bipyrimidinylplatinum-polyoxometalate, [Pt(Mebipym)Cl2]+[H4PV2Mo10O40]-, supported on silica is an active catalyst for the aerobic oxidation of methane to methanol in water under mild reaction conditions. Further oxidation of methanol yields acetaldehyde. The presence of the polyoxometalate is presumed to allow the facile oxidation of a Pt(II) intermediate to a Pt(IV) intermediate and to aid in the addition of methane to the Pt catalytic center.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号