Sufficient conditions of non‐uniqueness for the Coulomb friction problem

We consider the Signorini problem with Coulomb friction in elasticity. Sufficient conditions of non‐uniqueness are obtained for the continuous model. These conditions are linked to the existence of real eigenvalues of an operator in a Hilbert space. We prove that, under appropriate conditions, real eigenvalues exist for a non‐local Coulomb friction model. Finite element approximation of the eigenvalue problem is considered and numerical experiments are performed. Copyright © 2003 John Wiley & Sons, Ltd.     

New polymer syntheses. LXXXII. Syntheses of poly(ether-sulfone)s from silylated aliphatic diols including chiral monomers

Attempts were made to synthesize poly(ether-sulfone)s from aliphatic diols or bissilylated diols on the one hand, and 4,4′-dichlorodiphenylsulfone or 4,4′-difluorodiphenylsulfone on the other hand. The reaction conditions and the catalyst were varied. Polycondensations of silylated diols with 4,4′-difluorodiphenylsulfone and powdered K₂ CO₃ in N-methylpyr-rolidone proved to give the best results. Using silylated isosorbide and isomannide as mono-mers chiral poly(ether-sulfone)s were prepared. GPC measurements indicate weight-average molecular weights in the range of 27×10³–200×10³. © 1995 John Wiley & Sons, Inc.     

Dual input–output pairs for modeling hysteresis inspired by mem-models

We call attention to a dual-pair concept for modeling hysteresis involving instantaneous switching: Specifically, there are two input–output pairs for each hysteresis model under one specific input, namely a differential pair and an integral pair. Currently in engineering mechanics, only one pair is being recognized and utilized, not the other. Whereas this dual-pair concept is inherent in the differential and algebraic forms of memristors and memcapacitors, the concept has not been carried over to memristive system theory, nor to memcapacitive system theory. We show that the “zero-crossing” feature in memristors, memcapacitors, and memristive/memcapacitive models (i.e., the “mem-models”) is also a feature of the differential pairs of well-known non-mem-models, examples of which are Ramberg–Osgood, Bouc–Wen, bilinear hysteresis, and classical Preisach. The dual-pair concept thus connects mem-models and non-mem-models, thereby facilitating the modeling of hysteresis, and raising a set of scientific questions for further studies that might not otherwise come to awareness.     

Lifetimes of high-spin yrast states in 154Er

Lifetimes for high-spin levels (between about 10 and 30 ?) in ¹⁵⁴Er have been measured by the recoil-distance method. Non-collective, moderately collective and collective E2 transitions from states with lifetimes between at most 10 and 400 ps have been found. All available data on this nucleus are discussed within the framework of the oblate coupling scheme with the addition of collective degrees of freedom.     

Studies of interface phonons

The vibrational modes localized at the interface between two distinct crystals have been studied for a simple crystal model obeying all of the invariance conditions required for models used in studies of dynamical properties of crystal surfaces, and giving rise to Rayleigh surface waves. The two crystals are assumed to be semi-infinite simple cubic and to have the same lattice parameter a. They differ by their mass (M and M_A) and the central force interactions between first (K and K_a) and second nearest neighbors $\text{1}\text{2}\text{K}$ and $\text{1}\text{2}\text{K}{}_{\mathrm{A}}$. The interface is obtained by coupling the (001) free surfaces of these distinct crystals by central force intractions (K^'). We find that the variation of the interaction conditions (K^') at the interface and of the $\text{(}\text{K}\text{M}\text{)}\text{(}\text{K}{}_{\mathrm{A}}\text{M}{}_{\mathrm{A}}\text{)}$ parameter has the following qualitative effects on the properties of surface and bulk phonons. When (K^') increases from zero to a finite value, the frequencies of the surface phonons increase and are splitted in the case of two identical crystals. One can say that the surface phonons are transformed into interface modes. For some values of $\text{K}{}^{\mathrm{\text{'}}}\text{K}$ and $\text{(}\text{K}\text{M}\text{)}\text{(}\text{K}{}_{\mathrm{<mtext>A</mtext>}}\text{M}{}_{\mathrm{<mtext>A</mtext>}}\text{)}$ parameters these interface phonons may be admixed with bulk phonons and thus become virtual interface states.     

Lifetimes of rotational levels in170W

Lifetimes of the first 2⁺, 4⁺ and 6⁺ levels in¹⁷⁰W have been measured by the recoil-distance method based on the Doppler effect, using the¹⁵⁵Gd (²⁰Ne, 5n)¹⁷⁰W reaction. The following conclusions can be drawn from the results: if there are any deviations from the predictions of the rotational model for the lifetimes of the 4⁺ and 6⁺ states, they are smaller than 8.5 %; if this model accurately describes the nucleus¹⁷⁰W, the intrinsic quadrupole moment of this nucleus is: Q₀=5.93±0.06 barns, and its deformation is: β=0.240±0.003. The value of Q₀ is compared with the predictions of various calculations for the tungsten isotopes.     

Experimental evidence for low-spin members of “upper” bands in156Dy

Study of the energy levels of¹⁵⁶Dy through the¹⁵⁹Tb(p, 4n)¹⁵⁶Dy reaction has revealed the existence of six states with excitation energies between 1.8 and 2.8 MeV and spins between 6 and 12. Some of them can tentatively be assigned as low-spin members of “upper” bands which are thought to be responsible for the backbending phenomenon experimentally observed in the ground-state andβ-vibrational bands of this nucleus. Others could be levels of a negative-parity octupole band.     

Surface morphology of Ge‐modified 3C‐SiC/Si films

The influence of Ge deposition prior to carbon interaction with 3° off‐axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high‐energy electron diffraction (RHEED) and X‐ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C‐SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C‐SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C‐SiC decreases with increasing germanium precoverage. Copyright © 2008 John Wiley & Sons, Ltd.     

SiC polytypes process affected by Ge predeposition on Si(111) substrates

Structural and optical measurements were performed on silicon carbide (SiC) samples containing several polytypes. The SiC samples investigated were grown on (111) Si substrates by solid source molecular beam epitaxy (SSMBE). Several quantities of Ge were predeposited before the growth procedure. The influence of Ge on the SiC polytypes formation was studied by X-Ray, FTIR and μ-Raman characterizations methods. The spectra of the samples with less than one Ge monolayer exhibit a mixture of 2H, 15R and 3C–SiC polytypes. This mixture is due to the mismatch between the heterostructure layers. We propose that the Ge predeposition in the heterostructure can be used to stabilize and unify the polytypes formation.     

Characterization of multi-regime reaction zones in a piloted inhomogeneous jet flame with local extinction

Gradient free regime identification (GFRI) is applied to 1D Raman/Rayleigh/LIF measurements of temperature and major species from the intermediate velocity case of the Sydney piloted inhomogeneous jet flame series to better understand the structure of reaction zones and the downstream evolution of multi-regime characteristics. The GFRI approach allows local reaction zones to be detected and characterized as premixed, dominantly premixed, multi-regime, dominantly non-premixed, or non-premixed flame structures, based on flame markers (mixture fraction, chemical mode, and heat release rate) derived from the experimental data. The statistics of chemical mode zero-crossings, which mark premixed reaction zones, and the relative populations of flame structures are shown to be sensitive to the state of mixing in the near field of the flame and to the level of local extinction farther downstream. Multi-regime structures, where premixed and non-premixed reaction zones occur in close proximity and both contribute to overall heat release, account for nearly half the total population at streamwise locations within the first several jet diameters. There is a rapid transition within the near field whereby the relative population of non-premixed and dominantly non-premixed structures grows from 0.05 to nearly 0.5, and the population of premixed and dominantly premixed structures decreases correspondingly as fluid entering the reaction zone becomes progressively fuel-rich. Local extinction and re-ignition bring a resurgence in premixed-type structures, many of which occur at fuel-lean conditions. There are also modest populations of multi-regime structures, having chemical mode zero-crossings at lean conditions, which would not exist in a fully burning jet flame.