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Two problems of half-wave hole and high ripples in the transmittance region for a harmonic beam splitter had been pointed out and analyzed. Based on the application of a half-wavelength control and a new admittance matching methods, a harmonic beam splitter was designed and fabricated. The former method eliminated the half-wave hole fundamentally, and the latter smoothed high ripples in the transmittance region effectively. The matching stack consisted of a symmetrically periodic structure and provided a complete matching at the desired wavelength, i.e., both conditions for the equivalent admittance and phase thickness were fulfilled. Furthermore, both the theoretical and the tested curves had been given, and a good agreement between them was obtained. 相似文献
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对Cl/HN3/I2产生NCl(a)/I激光的过程进行了化学动力学计算,主要考察了Cl,HN3和I2的初始粒子数密度及其配比对小信号增益系数的影响。结果发现,当温度为400K, 初始Cl粒子数密度为1×1015,1×1016和1×1017cm-3时,小信号增益系数分别达到1.6×10-4,1.1×10-3和1.1×10-2cm-1,获得最佳小信号增益系数的HN3和I2的初始粒子数密度分别为初始Cl粒子数密度的1~2倍和2%~4%。同时,对Cl,HN3和I2配比对小信号增益系数和增益持续时间的影响进行了讨论。 相似文献
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Structure and Photoluminescence of Nano-ZnO Films Grown on a Si (100) Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn 下载免费PDF全文
Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission. 相似文献
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A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD). Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity. 相似文献
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