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3.5MgO·0.5MgF2·GeO2:Mn4+作为优异热稳定性和良好发光性能的红色荧光粉而被市场应用,然而,该粉体中MgF2的作用影响机理尚不明晰,阻碍其性能进一步优化和发展。采用高温固相法制备了系列Mn4+激活的锗酸盐荧光粉,通过对比加入MgF2、H3BO3(助熔剂),研究了该粉体的结构、形貌、发光性能等变化规律,阐明了MgF2的发光影响作用。研究表明,加入MgF2、H3BO3和不加任何助熔剂时的样品,其最佳烧结温度分别为1 150、1 250和1 350 ℃,上述温度下发光强度均为最佳值,其中加入MgF2、H3BO3的样品在最佳温度处生成了纯相。MgF2的添加,一方面同H3BO3一样作为助熔剂对生成纯相、提高样品结晶度起了积极的作用;另一方面,通过研究分析,确认F-离子成功掺杂进入晶格,促使样品生成的晶体结构为Mg14Ge5(O, F)24。加入MgF2、H3BO3在最佳烧结温度的样品的荧光寿命分别为0.93和0.75 ms。 相似文献
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Recently GaN-based high electron mobility transistors (HEMTs) have
revealed the superior properties of a high breakdown field and high
electron saturation velocity. Reduction of the gate leakage current
is one of the key issues to be solved for their further improvement.
This paper reports that an Al layer as thin as 3 nm was inserted
between the conventional Ni/Au Schottky contact and n-GaN epilayers,
and the Schottky behaviour of Al/Ni/Au contact was investigated
under various annealing conditions by current--voltage (I--V)
measurements. A non-linear fitting method was used to extract the
contact parameters from the I--V characteristic curves.
Experimental results indicate that reduction of the gate leakage
current by as much as four orders of magnitude was successfully
recorded by thermal annealing. And high quality Schottky contact
with a barrier height of 0.875 eV and the lowest reverse-bias
leakage current, respectively, can be obtained under 12 min
annealing at 450°C in N2 ambience. 相似文献
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Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures 下载免费PDF全文
By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related. 相似文献
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依据一维六方准晶压电材料反平面问题的基本方程,利用复变函数方法,通过引入适当的保角映射,研究了一维六方准晶压电材料中幂函数型曲线裂纹的反平面问题,并利用Cauchy积分理论,得到电不可通和电可通边界条件下的应力场和位移场的复表示以及裂纹尖端场强度因子的解析表达式. 相似文献
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3.5MgO·0.5MgF2·GeO2∶Mn4+作为优异热稳定性和良好发光性能的红色荧光粉而被市场应用,然而,该粉体中MgF2的作用影响机理尚不明晰,阻碍其性能进一步优化和发展。采用高温固相法制备了系列Mn4+激活的锗酸盐荧光粉,通过对比加入MgF2、H3BO3(助熔剂),研究了该粉体的结构、形貌、发光性能等变化规律,阐明了MgF2的发光影响作用。研究表明,加入MgF2、H3BO3和不加任何助熔剂时的样品,其最佳烧结温度分别为1 150、1 250和1 350 ℃,上述温度下发光强度均为最佳值,其中加入MgF2、H3BO3的样品在最佳温度处生成了纯相。MgF2的添加,一方面同H3BO3一样作为助熔剂对生成纯相、提高样品结晶度起了积极的作用;另一方面,通过研究分析,确认F-离子成功掺杂进入晶格,促使样品生成的晶体结构为Mg14Ge5(O,F)24。加入MgF2、H3BO3在最佳烧结温度的样品的荧光寿命分别为0.93和0.75 ms。 相似文献
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GC-MS法快速测定食品接触材料油墨中16种多环芳烃 总被引:1,自引:0,他引:1
以正己烷超声提取,弗罗里硅土固相萃取柱净化,以正己烷-二氯甲烷溶液(体积比1:1)洗脱,用GC-MS联用仪SIM模式外标法定量测定食品接触材料油墨中16种多环芳烃.在优化条件下,16种多环芳烃的浓度在0.1~4.0 μg/mL范围内与色谱峰面积呈良好的线性关系,线性相关系数大于0.995,检出限为0.12~3.24 ng/L.加标回收率为77.24%~ 104.76%,测定结果的相对标准偏差为1.05%~1.69%(n=6).该方法适用于食品接触材料油墨中PAHs的日常检测. 相似文献