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文章针对民营企业中的信息技术业,建立包含盈利能力、营运能力、偿债能力、扩张能力、创新能力与公司规模6个方面的指标体系,采用整合改进遗传算法和神经网络的GA-BP算法,对企业的成长性建立模型进行预测与分析.进一步,为验证模型性能,从WIND金融数据库获取数据并进行预处理后,测试集上可决系数R2为0.9990,性能优于其他五种机器学习算法.通过公司市值增长率进行相关系数分析,对建立的模型进行有效性检验,结果表明所选特征的有效性与合理性.最后通过随机森林进行封装特征重要性排序,对指标模型进行简化,选出的8个特征在测试集上改进GA-BP算法的R2为0.8927,再次证明了最初指标选择的合理性. 相似文献
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Imprints of molecular orbitals using photoelectron angular distribution by strong laser pulses of circular polarization
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We theoretically investigate the strong-field ionization of H+2 molecules in four different electronic states by calculating photoelectron angular distributions in circularly polarized fields. We find that the structure of photoelectron angular distribution depends on the molecular orbital as well as the energy of the photoelectron. The location of main lobes changes with the symmetric property of the molecular orbital. Generally, for molecules with bonding electronic states, the photoelectron's angular distribution shows a rotation of π/2 with respect to the molecular axis, while for molecules with antibonding electronic states, no rotation occurs. We use an interference scenario to interpret these phenomena. We also find that, due to the interference effect, a new pair of jets appears in the waist of the main lobes, and the main lobes or jets of the photoelectron's angular distribution are split into two parts if the photoelectron energy is sufficiently high. 相似文献
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Zi-Hao Chen 《中国物理 B》2023,32(1):17301-017301
The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor. 相似文献
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文章首先阐述导函数极限定理并给予注记.进一步,利用该定理证明了导函数的一个特性,并讨论其在样条函数插值理论中的应用.最后给出了导函数极限定理在复变函数域中的推广. 相似文献
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