Positive ground state solutions for Schrödinger–Poisson system with critical nonlocal term in ℝ3

This paper is dedicated to studying the following Schrödinger–Poisson system $$\left\{\begin{array}{ll}-\mathrm{\Delta }u+V(x)u-K(x)\varphi |u{|}^{3}u=a(x)f(u),& x\in {ℝ}^3,\\ -\mathrm{\Delta }\varphi =K(x)|u{|}^5,& x\in {ℝ}^3.\end{array}\right.$$ Under some different assumptions on functions V(x), K(x), a(x) and f(u), by using the variational approach, we establish the existence of positive ground state solutions.     

一阶最优性条件研究

本对由Botsko的关于多变量函数取极值的一阶导数检验条件定理^[1]进行了分析研究，给出了更实用而简捷的差别条件。最后，举出若干例子予以说明。     

非晶调制多层膜Nb/Si中的互扩散研究

利用原位Ｘ射线衍射技术得到非晶调制多层膜Ｎｂ／Ｓｉ中的互扩散系数与退火温度的关系，调制周期Ｌ＝３.２ｎｍ的非晶调制多层膜是用粒子溅射方法制备的．温度范围为４２３—５２３Ｋ的有效互扩散系数通过原位测量多层膜的一级调制峰强度与退火温度之间的关系而得到．利用缺陷陷阱延迟扩散机制解释了所得到的扩散系数与退火温度的关系．建立了可以解释较小前置系数的模型 关键词：     

Ni(111)表面一氧化碳和氢共吸附的密度泛函理论研究

本文用密度泛函理论(DFT)的总能计算研究了一氧化碳和氢原子在Ni(111)表面上p(2×2)共吸附系统的原子结构和电子态，结果表明CO和H原子分别被吸附于两个对角p(1×1)元胞的hcp和fcc位置.以氢分子和CO分子作为能量参考点，总吸附能为2.81 eV，相应的共吸附表面功函数φ为6.28 eV.计算得到的C—O，C—Ni和H—Ni的键长分别是1.19?, 1.96?和 1.71?，并且CO分子以C原子处于hcp的谷位与金属衬底原子结合.衬底Ni(111)的最外两层的晶面间距在吸附后的相对变化分别是 关键词： Fisher-Tropsch反应 催化作用 Ni(111) p(2×2)/(CO+H) 共吸附     

光纤面板传输机理研究(Ⅱ)

本文在文献[1]研究的基础上,建立了光纤面板的结构模型。利用光学信息理论,研究了光纤面板的传输机理。通过分析、计算光纤面板传输的光学信息量,给出了光纤面板传递最大信息量时的最佳结构参数和扩散参量。     

具有扩散的Lotka-Volterra系统的持续性

利用最大值原理结合上、下解的方法，讨论了一类具有扩散的竞争－捕食的Lotka-Volterra系统静态解的存在性与持续生存。     

“神龙一号”注入器研制

“神龙一号”注入器是直线感应加速器的束流源，它采用了感应叠加的高压加载方式，包括脉冲功率系统、感应腔、阴阳极杆、绝缘支撑、二极管和束流传输系统等子系统. 在研制中采用了径向绝缘支撑、对中支撑调节系统、类Pierce阴极等先进技术，以及二极管线圈内置和外径为800mm的铁氧体大环等创新. 参数测试显示，3.5MeV注入器达到了世界先进水平.     

Atomic-scale simulation of nano-grains:structure and diffusion properties

Nanograins are characterized by a typical grain size from lto 100 nm.Mclecular dynamics aimubations have been carried out for the nanograin sphere with the diameters from 1.45 to 10.12 nm.We study the influence of grain size on structure and diffusion properties of the nanograins.The results reveal that as the grain size is reduced,the fraction of grain surface increases significantly,and the surface width is approximately constant；the diffusicn coefficlent is increased sharply,and the relation of the diffusion coefficient and the grain size is close to exponential relation below 10nm.     

Anti-BZ-Structure in Effect Algebras

The definitions of sharply approximating effect algebras, anti-BZ-effect algebras, central approximating effect algebras, and S-anti-BZ-effect algebras are given, the relationships between sharply approximating effect algebras and anti-BZ-effect algebras, between central approximating effect algebras and anti-BZ-effect algebras are established, and the set of anti-BZ-sharp elements in S-anti-BZ-effect algebras is proved to be an orthomodular lattice.