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平面膜结构拓扑优化的有无复合体方法 总被引:18,自引:3,他引:18
将作者对桁架在应力约束下结构拓扑优化的有无复合体模型发展到平面膜结构在应力、位移约束下结构拓扑优化的建模与求解。同时提出了该模型的有效解法,获得了令人满意的数值结果。本文工作表明独立连续拓扑变量的提出对于结构拓扑优化的研究是有意义的。 相似文献
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平面连续体多工况应力约束下结构拓扑优化的有无复合体方法 总被引:8,自引:1,他引:7
本文在[4]的基础上,按“有无复合体”模型对应力的约束下多工况平面连续体结构拓扑优化的求解进行研究,提出了“工况影响系数”的概念,用于“病态荷载”问题的识别的解决,获得了令人满意的数值结果。 相似文献
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采用60Co γ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1, 1, 10 Mrad(Si)总剂量辐照实验. 实验发现, 随着辐照剂量的增加, AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大, 辐照后理想因子n > 2; 而Si基可见光p-i-n 结构探测器的理想因子随辐照剂量的变化并不明显. AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化, Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化.
关键词:
xGa1?xN')" href="#">高铝组分AlxGa1?xN
γ射线辐射效应
理想因子
欧姆接触 相似文献
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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
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The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity(ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP) that used to extract the interface traps(Nit) and oxide trapped charges(Not). Electrical characteristics in GLPNP transistors induced by ~(60)Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS. 相似文献
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基于标准工艺线的设计加固是大规模集成电路抗辐射加固的发展趋势,对微纳米单元器件进行辐射效应参数提取是实现设计加固的前提。为了摒除参数提取过程中封装引入的影响,实现在线参数测试,本文设计了一套晶圆级器件辐照与辐射效应参数提取试验装置,兼备晶圆级器件电离总剂量辐照、器件参数在线测试分析功能,并且具有通用性强、测量范围宽、结构一体化、操作自动化等特点。对设备在50 kV管压下产生的X射线能谱、剂量率、束斑的测量以及对晶圆级MOS器件进行I-V、C-V、低频噪声特性的测试分析结果表明,该设备符合ASTM F1467测试标准,且能满足晶圆级器件辐射效应参数提取要求,可为大规模集成电路抗辐射设计加固提供良好的试验条件。 相似文献
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采用变剂量率和变温两种辐照方法,对4款典型模拟电路的低剂量率辐照损伤特性及变化规律进行了研究与评估,分析了两种辐照方法下其辐照敏感参数的变化,比较了不同辐照方式下器件的退化程度,讨论了这两种实验室加速评估低剂量率辐照损伤方法的机理.结果显示,变剂量率辐照可以较快地预测实际低剂量率下的辐照损伤趋势,且在较低的总剂量下能够给出不太保守的估计,但其预测的总剂量受到器件退化速度的影响;变温辐照加速评估方法能够保守地估计其低剂量率下的辐照损伤,其评估范围不仅可达1000 Gy(Si),且可将评估时间缩短为12 h左右.研究结果表明,双极电路的低剂量率辐照损伤增强效应与感生的界面态密度和氢化的氧空位缺陷有关,辐照时剂量率和温度的改变会促进界面态的生长,抑制界面态的钝化作用,从而激发器件的辐照损伤潜能. 相似文献
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Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator
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The synergism effect of total ionizing dose(TID) on a single event transient(SET) in a bipolar comparator is investigated. Experimental results show that the shapes of the SET are considerably influenced by the TID accumulated in low dose rates. The variation tendency of SET shapes can be accurately simulated by temperature switching irradiation. The mechanism of this synergism effect is also analyzed in brief via the operating schematic of a comparator. After the accumulation of 100 krad(Si), the lower tendency of negative SET can be attributed to the degeneration of . The change tendency of a positive SET, either lower or higher, is dependent on the load condition that limits the output range of the comparator. 相似文献