Synthesis and Liquid Crystalline Properties of 3-Substituted Pentane-2,4-dione, Pyrazole and Isoxazole Derivatives

The γ-substituted β-diketonate 2,4-dioxo-3-pentyl 4-[4-（n-octyloxy）cinnamoyl]oxybenzoate 1 and its pyrazole and isoxazole derivatives （2 and 3 respectively） have been synthesized and characterized by the spectroscopic methods and elemental analysis. The mesogenic properties of these compounds have been studied by polarizing optical microscopy （POM） and differential scanning calorimetry （DSC）. A monotropic nematic mesophase was observed for the β-diketonate 1, in contrast, the pyrazole 2 displays an enantiotropic smectic A and isoxazole 3 exhibits an enantiotropic nematic mesophase. The relationship between the structure and liquid crystalline properties has also been discussed.     

Enhanced phase sensitive amplification towards improving noise immunity

Quantum states are essential resource for quantum-enhanced applications. Loss incurred in the distribution channel,however, dissipates the high signal-to-noise ratio advantage enjoyed by the squeezed state. Here, we first demonstrate noise immunity enhancement by using phase-sensitive amplifier(PSA) with measurement-based noiseless linear amplifier(MB-NLA). We explore the signal transfer capability with the amplifier in a noisy channel. The MB-NLA enhanced PSA has obvious suppression effect on c...     

g-取代的b-二酮酯及其吡唑、异噁唑衍生物的合成与液晶性能研究

合成并表征了g-取代的b-二酮酯[ 4-(4-正辛烷基丙烯酸酯基)苯甲酸2,4-二氧代-3-戊基酯1] 及其吡唑衍生物2 和异噁唑衍生物3。通过DSC和偏光显微镜对它们的液晶性进行了研究。结果表明b-二酮酯 1 为单变向列相N液晶，而吡唑化合物2和异噁唑化合物3分别为互变近晶A相向列相N液晶。本文还讨论了结构与液晶性能之间的关系。     

丙烯酸酯基桥联γ -取代的β -二酮吡唑及异噁唑衍生物的合成与表征

采用丙烯酸酯基桥联γ -取代的β -二酮分别与水合肼和盐酸羟胺反应, 合成并表征了含有长链和共轭结构的吡唑和异噁唑类新化合物, 研究了不同溶剂对反应的影响. 实验结果表明, 当用乙醇为反应溶剂时, γ -取代的β -二酮与盐酸羟胺反应得到异噁唑化合物;与水合肼反应不能得到目标吡唑化合物, 而得到α , β -不饱和双键被还原的酰肼化合物;当用乙酸作为反应溶剂时, γ -取代的β -二酮与水合肼反应得到目标吡唑类化合物. 进一步探讨了生成酰肼化合物的反应历程.     

2-(对烷氧基苯甲酸酯基或对烷氧基苯丙烯酸酯基)-5-氧-2,5-二氢呋喃化合物的合成与液晶性质研究

Two series of p-alkoxybenzoates Ia-If and p-alkoxycinnamates IIa-IIf, each species beating one terminal furanone, have been synthesized and characterized by IR, ^13C NMR, ^1H NMR, MS spectra and elemental analysis. The mesogenic properties of both series of furanones have been studied by polarizing optical microscopy and differential scanning calorimetry （DSC）. The relationship between structures and mesogenic properties was discussed. The results show that the increased alkoxy chain length （C7-C12） and the bridging groups between the benzene ring and the furanone ring affected the mesomorphic properties greatly, and the two series of furanones might display monotropic or enantiotropic nematic （N） or semetic C （SmC） mesophases and different mesomorpic phase temperature ranges corresponding to different carbon chain length.     

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

纵向数据半参数回归模型的最小二乘局部线性估计

本文考虑纵向数据半参数回归模型:Yij=XiTjβ+g(Tij)+iεj,基于最小二乘法和局部线性拟合的方法建立了模型中参数分量β,回归函数g(.)和误差方差σ2的估计,在适当条件下给出了估计量的相合性,通过模拟研究说明了该方法在有限样本情况下具有良好的性质。     

塞来昔布的密度泛函理论计算及光谱分析

塞来昔布(Celecoxib, CXB)是COX-2的高选择性抑制剂,经过20年的发展已经成为世界范围内使用最为广泛的一类处方药.本文基于密度泛函理论,使用B3LYP泛函,6-311++G(d, p)基组进行结构优化.在此工作上对该药物分子的结构、红外光谱、拉曼光谱、分子前线轨道、静电势和激发态性质做了一系列的研究.结果表明：CXB分子是一个稳定的非平面扭曲结构,此结构使得该药物分子在COX-2上的疏水通道中可以迅速通过,从而形成了一个可与苯磺酰胺片段结合的结合腔.对化合物进行频率计算,分别得到红外光谱和拉曼光谱,与实验采集的数据进行对比,呈现出较好的一致性.对分子的基态进行前线轨道和静电势的分析,磺酰胺基与COX-2易形成氢键作用.在CXB分子的激发态研究中发现,CXB分子的激发态性质主要由第1激发态、第3激发态和第6激发态共同决定.这为理解CXB的作用机理提供了重要的信息,也为后期扩展CXB衍生物提供了理论基础.     

二维声子晶体线缺陷聚声效应研究

基于数值方法研究了含线缺陷的二维声子晶体的聚声效应.利用结合超元胞技术的平面波展开法及有限元方法,分别对线缺陷二维声子晶体的能带结构及其内部声场分布规律进行了计算分析;以线缺陷轴线上声压梯度放大倍数表征聚声效果,分析了声子晶体结构参数对该放大倍数的影响规律.结果表明,填充率大、结构规模适当的二维线缺陷声子晶体具有更好的聚声效果;线缺陷的理想位置应在声子晶体的几何轴线上.此结果可为高效声能量回收器件的设计提供理论支持.