Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

射频磁控溅射低温制备ITO薄膜

利用射频磁控溅射法低温制备铟锡氧化物薄膜,主要研究了氧氩流量比、溅射功率、溅射压强、沉积温度和靶基距等工艺参数对ITO薄膜结构和光电性能的影响.在优化的沉积条件即氧氩流量比0.1/25、溅射功率210W、溅射压强0.2 Pa、靶基距2.0 cm和衬底为100℃的低温下制备的ITO薄膜电阻率为7.3×10-4Ω·cm、可见光范围内平均透光率为89.4;.在氩气气氛中200℃低温退火60 min后,ITO薄膜的电阻率降为3.8 ×10-4Ω·cm,透光率不变.     

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

<正>The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy,spectroscopic ellipsometer and atomic force microscopy.It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH_4 and the amorphous induction of glass surface during the initial ignition process,and growth of the incubation layer can be suppressed and uniformμc-Si:H phase is generated by the application of delayed initial SiH_4 density and silane profiling methods.     

Al纳米颗粒增强微晶硅薄膜太阳电池光吸收的模拟研究

利用价格低廉、性能优良的金属纳米颗粒增强太阳电池的光吸收具有广阔的应用前景. 通过建立三维数值模型, 模拟了微晶硅薄膜电池前表面周期性分布的Al纳米颗粒阵列对电池光吸收的影响, 并对其结构参数进行了优化. 模拟结果表明: 对于球状Al纳米颗粒阵列, 影响电池光吸收的关键参数是周期P与半径R的比值, 或者说是颗粒的表面覆盖度; 当P/R=4–5时, 总的光吸收较参考电池提高可达20%. 与球状颗粒相比, 优化后的半球状Al纳米颗粒阵列可获得更好的陷光效果, 但后者对颗粒半径R的变化较敏感. 另外, 结合电场分布, 对电池光吸收增强的物理机理进行了分析.     

椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

低温制备微晶硅薄膜生长机制的研究

采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品，用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到：在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长；而在单晶硅衬底上，薄膜早期以有限扩散 生长模式生长，当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实，玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应 关键词： 生长机制 微晶硅薄膜 表面形貌 热丝化学气相沉积     

铯掺杂提升反梯度结构二维(CMA)2MA8Pb9I28钙钛矿薄膜及太阳电池的性能

相对于3D钙钛矿材料,二维(2D)有机-无机杂化钙钛矿材料具有更好的稳定性.然而由于载流子输运性差, 2D钙钛矿太阳电池效率较低.为了提高2D钙钛矿太阳电池的效率,制备了铯掺杂的具有反梯度结构的二维(CMA)₂MA₈Pb₉I₂₈薄膜.研究结果发现:CsI掺杂能够改善(CMA)₂MA₈Pb₉I₂₈薄膜的形貌、增加晶粒尺寸、降低缺陷态密度,并且提高了(CMA)₂MA₈Pb₉I₂₈钙钛矿薄膜的热稳定性.最后, CsI掺杂浓度为10%时制备(CMA)₂MA₈Pb₉I₂₈钙钛矿太阳电池效率最高,达到了14.67%,相对于未掺杂的电池效率(10.06%)提高了45.8%.     

Preparing Cu₂ZnSnS₄ films using the co-electrodeposition method with ionic liquids

Cu₂ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn+Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.     

数值模拟p/i界面对微晶硅薄膜太阳电池性能的影响

采用美国宾州大学开发的AMPS(Analysis of Microelectronic and Photonic Structures)软件模拟了p/i界面缺陷态密度(Npt/i)和非晶孵化层厚度(d)对pin型氢化微晶硅(μc-Si:H)薄膜太阳电池性能的影响.结果表明:随着Npt/i的增大,电池的开路电压Voc和填充因子FF单调减小,短路电流Jsc基本不变;随着d的增大,Jsc和FF单调减小,Voc反而增大;Npt/i和d值的增大均会导致电池光电转换效率η下降.通过对电池内部的电场及能带的分析,对上述模拟结果进行了解释.     

椭圆偏振光谱实时在线监测与离线分析微晶硅薄膜的生长

采用甚高频等离子体增强化学气相沉积技术高速沉积了有无籽晶层两个系列微晶硅薄膜,通过椭圆偏振光谱、拉曼光谱和XRD对薄膜进行了分析,发现采用籽晶层后,在薄膜沉积初期有促进晶化的作用;由于籽晶层减少了薄膜的诱导成核时间,提高了薄膜的沉积速率,对比了实时在线和离线椭圆偏振光谱两种测量状态对分析微晶硅薄膜的影响,研究发现,当薄膜较薄时,实时在线测量得到的薄膜厚度小于离线下的数值;当薄膜较厚时,两种测量条件下得到的薄膜厚度差异较小;实时在线条件下得到的表面粗糙度要大于离线条件下得到的数值,这是由于薄膜暴露在大气中后表面有硅氧化物生成,对表面有平滑作用.