ZnS／ZnSe多量子阱的光调制测试

以DMZn、H2Se和H2S为源，用Ap-MOCVD法在GaAs(100)衬底上生长出了ZnS／ZnSe超晶格量子阱，并用X射线衍射等方法鉴定了超晶格量子阱结构，在带蚀孔的衬底的ZnS／ZnSe超晶格量子阱上，首次观测到皮秒量级的光光调制现象。     

Comparative Study of Properties of ZnO／GaN／Al203 and ZnO／Al203 Films Grown by Low－Pressure Metal Organic Chemical Vapour Deposition

ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al203 films and c-Al203 substrates. The structure and optical properties of the ZnO/GaN/Al203 and ZnO/Al203 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al203 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al203 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.     

平面双核酞菁钴中心离子价态及其性质研究

采用XPS方法确定了平面双核酞菁钴分子中两个Co离子的价态．讨论了平面双核酞菁钴分子中Co离子的价态与分子构形、配位性质、分子识别和分子整流特性等之间的联系．在平面双核酞菁钴分子中，两个Co离子具有不同的价态，Co(I)Pc—PcCo(Ⅲ)这种分子构形使得该分子表现出一些独特的性质．在配位化学上表现出一个Co(I)Pc—PcCo(Ⅲ)分子与三个配体形成配合物，在形成单分子膜时表现出分子的识别能力，Co(I)Pc—PcCo(Ⅲ)表现出分子整流特性。     

采用MOCVD法在p型Si衬底上生长Zn0薄膜

采用金属有机物化学气相沉积(MOCVD)法在p型Si(100)衬底上生长未掺杂的n型ZnO薄膜.在不同的生长温度下,c轴取向ZnO薄膜被生长在Si衬底上,生长所采用的锌源为二乙基锌(DEZn),氧源为氧气(O2).通过X射线衍射(XRD)、光电子能谱(XPS)和荧光光(PL)谱研究了薄膜的结构和光学特性.研究表明温度为610℃时生长的ZnO薄膜显示最好的结构和光学特性.此外,所生长n-ZnO/p-Si异质结的I-V特性曲线都表现明显的整流特性,且反向漏电流很小.在620℃生长的异质结的漏电流相对最大,大于在其它温度下生长的异质结的漏电流.