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本文采用原子力显微镜(AFM)和XRD研究了生长在蓝宝石(11-02)基片上的CeO_2缓冲层在不同的退火温度和退火时间下表面形貌和相结构的变化,以及对Tl-2212薄膜超导特性的影响.AFM和XRD研究表明,CeO_2薄膜在流动氧环境中退火,表面形貌发生显著的变化;CeO_2薄膜在最佳条件下退火后,可获得原子级光滑表面,结晶质量明显提高.实验结果表明,缓冲层的结晶质量和表面粗糙度与Tl-2212薄膜的超导特性密切相关.在经过最佳条件退火后的CeO_2缓冲层上制备了厚度为500 nm无裂纹的Tl-2212超导薄膜,其临界转变温度(T_c)达到107 K,液氮温度下临界电流密度(J_c)为3.9 MA/cm~2(77 K,0 T),微波表面电阻(R_s)约为281 μΩ(77 K,10 GHz). 相似文献
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我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2. 相似文献
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研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ. 相似文献
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Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate 下载免费PDF全文
The double-side Tl2Ba2 CaCu2O8 (Tl-2212) superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω. 相似文献
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