Superjunction nanoscale partially narrow mesa IGBT towards superior performance

We present a detailed study of a superjunction(SJ) nanoscale partially narrow mesa(PNM) insulated gate bipolar transistor(IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage(V_(ce(sat))) and low turn-off loss(E_(off)) while maintaining other device parameters. Compared with the conventional 1.2 k V trench IGBT, our simulation result shows that the V_(ce(sat))of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 k V IGBT. Meanwhile, the fall time decreases from109.7 ns to 12 ns and the E off is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between V_(ce(sat))and E_(off) is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering(CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique.Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.     

Ce3+单掺和Ce3+,Eu3+共掺杂CaF2晶体生长与光学特性研究

采用Bridgman方法在氩气氛保护的单晶炉内生长出了Ce3+掺杂的以及Ce3+和Eu3+共掺的CaF2晶体,利用Ce2O3和E2O3分别与氢氟酸反应合成了CeF3和EuF3掺杂试剂,对掺杂晶体生长的起始原料-特定组成的CaF2、CeF3、EuF3混合物进行了高温氟化处理,确定了掺杂晶体的物相,讨论了掺杂浓度对晶体紫外波段透过率的影响.此外,还初步分析了Ce3+和Eu3+共掺的CaF2晶体作为紫外滤光材料的可行性.