排序方式: 共有36条查询结果,搜索用时 15 毫秒
1.
Ya-Jun Xu Wei Yang Bang-Hu Xie Zheng-Ying Liu Ming-Bo Yang 《Journal of Macromolecular Science: Physics》2013,52(3):573-586
The effect of variation of injection conditions and addition of nano-calcium carbonate (CaCO3), nano-silicon dioxide (SiO2) and full-vulcanized nano-powdered styrene butadiene rubber (PSBR) on the shrinkage of injection-molded polypropylene-ethylene copolymer (90/10, co-PP) were investigated. The results showed that the shrinkage was different for different locations along the flow path. The shrinkage in the length direction of the injection-molded sample varied with the adjustment of the processing parameters, while the shrinkage in the width and thickness direction was almost unchanged. The addition of nano-CaCO3 and PSBR decreased the shrinkage of co-PP, while the shrinkage of co-PP/ SiO2 composite was almost unchanged. 相似文献
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Non-recycling impurities are injected into ohmic HL-2A plasma for the first time. The impurities of titanium and aluminium are injected in the discharges with varying plasma density and current. The convection and diffusion process of the injected impurity ions during the inward phase are qualitatively investigated. The results show that the transport of impurities is much slower in the central region of the plasma than outside of it and that it is greatly enhanced during sawtooth crashes. 相似文献
3.
iPP/HDPE/CB复合材料的制备及反常的温度-电阻效应 总被引:1,自引:0,他引:1
本文利用普通熔融挤出法制备了iPP/HDPE/CB复合材料, 分别采用注射成型及压制成型方法得到测试试样. 通过研究复合材料体积电阻率随温度的变化, 考察注塑试样和压制试样的PTC特性及复合材料形态结构与试样PTC特性之间的关系. 相似文献
4.
采用分子动力学(MD)模拟研究了离子束辅助沉积(1BAD)生长类金刚石(DLC)膜的物理过程.分 别选C2分子和Ar离子作为沉积源和辅助沉积粒子.改变Ar的入射能量和到达比(A r/C),研 究了它对DLC膜结构的影响.重点讨论了Ar辅助沉积引起表面原子的瞬间活性变化对薄膜结构 产生的影响.分析表明,由于Ar离子的轰击引起的能量和动量的传递,大大地增强了C原子在 表面的反冲动能及迁移概率,增加了合成薄膜的SP3键含量.研究结果和实验 观察一致,并从合成机理上给出了一些定量解释.
关键词:
类金刚石膜
离子束辅助沉积
分子动力学模拟 相似文献
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通过测量不同聚合体系下的阴离子聚合尼龙6(APA-6)反应过程中转化率随时间的变化, 结合真空导入成型的特点, 研究了适合于真空导入成型的APA-6的聚合体系. 研究发现, 己内酰胺钠盐/双酰化内酰胺-1,6-己二胺(C10/C20)(100℃)和己内酰胺钠盐/甲苯二异氰酸酯(C10/TDI)体系反应初期均存在一个转化率线性缓慢增长期, 随后, 聚合体系开始快速反应, 转化率呈指数增长, 反应很快达到平衡. 初步判定这两种体系是适合真空导入成型APA-6复合材料的聚合体系. 在转化率测试的基础上, 利用DSC热分析从活性中心的形成机理进一步分析了C10/TDI体系更适合于较大、 较厚和结构复杂制品的整体成型的原因. 此外, 与普通PA6相比, 真空导入成型APA-6的结晶度、 模量和Tg显著提高, 并且在2种理想体系下聚合的APA-6的性能也有差别, 从活化剂的封端和解封端机理上进行了初步探讨. 相似文献
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基于联萘衍生物手性构型高度稳定以及联萘结构中2个萘平面的两面角可以在一定范围内张合的特点, 分别以光学活性的(R)和(S)-2,2'-二乙炔基-1,1'-联萘为模板, 设计了一种含有8个“铰链”结构单元的新的环芳分子¾—(R,R,R,R,R,R,R,R)-3和(S,S,S,S,S,S,S,S)-3. 其合成路线涉及间苯基连接桥的链接, 保护基的脱去和控制导入以及分子间偶合等步骤. 用MS, IR, UV-Vis, 1H和13C NMR以及元素分析等技术对中间体和目标化合物进行了结构表征. 测定并比较了2个目标化合物的比旋光度[α]D和圆二色(CD)性质. 在CH2Cl2溶液中, 两个异构体(R,R,R,R,R,R,R,R)-3和(S,S,S,S,S,S,S,S)-3的[α]D25值分别为-911.8和+908.6, 并且它们的CD谱表现出对称的镜像特征.这些实验结果清楚地反映了它们之间的对映异构关系. 相似文献
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Density and impurity profile behaviours in HL-2A tokamak with different gas fuelling methods
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The electron density profile peaking and the impurity accumulation
in the HL-2A tokamak plasma are observed when three kinds of
fuelling methods are separately used at different fuelling particle
locations. The density profile becomes more peaked when the
line-averaged electron density approaches the Greenwald density limit
nG and, consequently, impurity accumulation is often
observed. A linear increase regime in the density range ne<
0.6nG and a saturation regime in ne > 0.6nG
are obtained. There is no significant difference in achieved density
peaking factor fne between the supersonic molecular beam
injection (SMBI) and gas puffing into the plasma main chamber.
However, the achieved fne is relatively low, in particular,
in the case of density below 0.7nG, when the working
gas is puffed into the divertor chamber. A discharge with a
density as high as 1.2nG, i.e. ne = 1.2nG,
can be achieved by SMBI just after siliconization as a wall
conditioning. The metallic impurities, such as iron and chromium,
also increase remarkably when the impurity accumulation happens. The
mechanism behind the density peaking and impurity accumulation is
studied by investigating both the density peaking factor versus the
effective collisionality and the radiation peaking versus density
peaking. 相似文献
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Using the molecular dynamics method, the stability of small He-vacancy clusters is studied under the condition of the high He and low vacancy densities. The result shows that there is a competition between He atoms detrapped and self-interstitial atoms (SIAs) emitted during the clustering of He atoms. When the He number is above a critical value of 9, the SIA emission is predominant. The SIA emission can result in deep capture of He atoms since the binding energy of He to a He-vacancy cluster is increased with the number of SIAs created. The cluster thus grows up. In addition, more SIAs are created when the temperature is elevated. The average volume of a He atom is increased. The cluster expansion takes place at high temperature. 相似文献