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Eleni Chountoulesi Christine Mitzithra Konstantinos Kordatos Constantina Kollia Zaphirios Loizos 《合成通讯》2013,43(15):2042-2049
Refined mixed fullerenes were used as a reagent in known organic reactions instead of the pure fullerene C60 with aim to find an alternative, low-cost method for the synthesis of fullerene derivatives potentially exhibiting photoconductive properties. The isolation of C60 or C70 in clean form without admixtures requires the use of large quantities of toluene or other nonpolar solvents, polluting the environment and multiplying the production cost. 1,3-Dipolar cycloaddition of azomethine ylide to fullerite was chosen because this reaction is one of the most widely used for fullerene functionalization, producing material possibly presenting photoinducing behavior. The data showed that the use of the cheaper mixed fullerenes instead of pure C60 leads to the isolation of the same expected products with similar yields. The photoelectric properties of mixed fullerenes and their organic derivatives were also examined. A slightly semiconductive behavior was confirmed as well as a noticeable photoresponse. Supplemental materials are available for this article. Go to the publisher's online edition of Synthetic Communications® to view the free supplemental file. 相似文献
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Mirtat Bouroushian Tatjana Kosanovic Zafiris Loizos Nicholas Spyrellis 《Journal of Solid State Electrochemistry》2002,6(4):272-278
An investigation on electrochemical ZnSe thin film growth from acidic aqueous baths of Se(IV) and Zn(II) species is described.
The range of co-deposition potentials is predicted on a thermodynamic basis according to a known electrochemical model. A
study on the voltammetric behavior of Ti and Ni electrode substrates in the working solutions at various temperatures provides
the main features of the applied electrochemical process. Cathodic electrodeposition at high temperatures (>65 °C) results
in the formation of polycrystalline cubic, randomly oriented, ZnSe crystallites suffering, in general, from the presence of
a crystalline Se phase in excess. Annealing of as-grown films adjusts the stoichiometry and leads to the production of semiconductive
ZnSe with a band gap width of 2.7 eV.
Electronic Publication 相似文献
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