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This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO2 layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.  相似文献   
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 Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling (XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions. It was found that sputtering by Ar+ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by O+ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations such as hydrogenation are discussed. Received March 4, 2002; accepted July 26, 2002  相似文献   
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Using ultra-high vacuum scanning tunneling microscopy (UHV-STM), we show that copper-phthalocyanine (CuPc) grows in a well ordered manner on hydrogen passivated vicinal silicon surfaces. CuPc grows one-dimensionally parallel to the monatomic steps on the vicinal silicon surface. Surprisingly, elongated clusters of the CuPc parallel to the step directions are formed even on the middle of the terraces well away from the step edges. The one-dimensional growth mode continues even after the full monolayer coverage on the substrate which results in strongly oriented growth mode of a thin film of CuPc on the vicinal silicon surfaces.  相似文献   
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Cubic bridgeless graphs with chromatic index four are called uncolorable. We introduce parameters measuring the uncolorability of those graphs and relate them to each other. For k=2,3, let ck be the maximum size of a k-colorable subgraph of a cubic graph G=(V,E). We consider r3=|E|−c3 and . We show that on one side r3 and r2 bound each other, but on the other side that the difference between them can be arbitrarily large. We also compare them to the oddness ω of G, the smallest possible number of odd circuits in a 2-factor of G. We construct cyclically 5-edge connected cubic graphs where r3 and ω are arbitrarily far apart, and show that for each 1c<2 there is a cubic graph such that ωcr3. For k=2,3, let ζk denote the largest fraction of edges that can be k-colored. We give best possible bounds for these parameters, and relate them to each other.  相似文献   
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The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.  相似文献   
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Zusammenfassung Es wird eine durch DNS ausgel?ste biologische Wirkkette diskutiert. Durch DNS-Injektion lassen sich beim Warmblüter DNase-Aktivit?tserscheinungen hervorrufen. DNasen bewirken in niedrigen Konzentrationsbereichen 10−13-10−5 g/ml eine Steigerung der Zellzahl. In h?heren Konzentrationen wirken sie hemmend auf die Lebenst?tigkeit. Aufgrund dieser experimentellen Befunde ergibt sich ein selbstregelnder Mechanismus. Ausgeführt mit Mitteln der Deutschen Forschungsgemeinschaft.  相似文献   
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Polymer electrolyte systems were prepared for the first time by dissolution of amidomagnesium chlorides in poly(ethylene oxide), (PEO). For the preparation, solutions of (hexamethyldisilylamido)magnesium chloride, (dimethylpyrrolyl)magnesium chloride, (diisopropylamido)magnesium chloride, piperidinomagnesium chloride and morpholinomagnesium chloride were chosen. The composition of these polymer electrolyte systems corresponds to the general formula R2NMgCl·P(EO)n·THF. Most work has been done with the system (hexamethyldisilylamido)magnesium chloride in PEO, (Me3Si)2NMgCl·P(EO)n·THF, with n= 3, 4, 5, or 7. The electrolytes have a soft rubber-like consistency. At 30 °C, electrical conductivities of 10−6–10−5 S/cm were found. The conductivities were measured in the temperature range 20–60 °C. Within this temperature range a linear dependence of the logarithms of the conductivity on the inverse temperature was found and activation energies for the conducting process of 30–60 kJ/mol were calculated. Using those polymer electrolytes with a high content of the amidomagnesium compound, a reversible magnesium deposition takes place by cathodic reduction at potentials below −1.9 V vs. a Ag/AgCl reference electrode. These polymer electrolytes were found to be stable against oxidation up to about −0.3 V vs. Ag/AgCl. Electronic Publication  相似文献   
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