涡发生器结构对翼型绕流场的影响

为了研究涡发生器在风力机叶片上的应用,以进一步提高风力机气动效率,本文采用CFD数值模拟方法,分析涡发生器几何形状对其绕流场和翼型边界层特性的影响.涡发生器几何形状为同样高度的矩形、梯形和三角形。翼型为风力机专用翼型DU97-W-300。首先对数值模拟结果与实验值进行了对比,验证了数值方法的可信性。然后详细讨论了各种涡发生器所产生的集中涡涡量、翼型边界层特性、以及绕流场等沿流向的发展演变。总体上看,三角形涡发生器较适合用于风力机翼型的流动控制。     

5,5′-双(4-甲基苯基)-2,2′-联恶唑的晶体结构及构象

芳香取代恶唑是一类优良的有机萤光体,如1,4-双(5-苯基恶唑-2-基)苯(简称POPOP)可作为闪烁剂或激光染料使用。作者在前文中曾报道了一系列5,5′-双(取代苯基)-2,2′-联恶唑(1)的合成(简称POOP),它们也具有良好的激光性能。本文报道(1a,R=R′=4-CH_3)的晶体结构,并辅以分子力学法(MM-X程序)计算,探讨了POOP分子的基态构象。     

碲在金衬底上的不可逆吸附行为及其欠电位沉积机制的研究

研究了碲在金衬底上的不可逆吸附行为特征及其对碲原子欠电位沉积行为的影响. 同时也探讨了碲原子于金衬底上的欠电位沉积机制. 结果显示在开路条件下碲原子在金衬底表面具有不可逆的吸附行为, 证实了在金的双电层范围内很难将这种碲的吸附物移走. 为了完全移走碲的吸附物, 需要采用特定的电化学清洗程序. 发现碲的吸附物移走发生在电位循环至金的氧化区域, 且在该区域这种碲的吸附物移走与金的表面氧化同时发生. 扫描速率分析结果证实碲欠电位沉积在金表面符合Sanchez-Maestre模型的三个标准, 说明碲原子于金衬底上欠电位沉积符合二维形核和生长机制.     

基于布里渊载波相移的宽带可调谐二倍频微波信号生成

本文提出并实验验证了一种基于光纤中受激布里渊散射效应的光子二倍频微波信号生成技术.利用布里渊增益谱内的强色散特性,对光强度调制器产生的双边带调制信号的载波进行π/2相移,可实现载波与±1阶边带拍频仅生成二倍频微波信号.由于光纤中受激布里渊散射的窄带特性以及仅对双边带调制信号的载波进行相移,不影响调制信号两个边带的幅值和相位,因而生成的二倍频微波信号可实现宽带调谐,调谐范围仅受其他光器件的工作带宽限制.此外,信号光和产生受激布里渊散射的抽运光均来自同一光源,因而不受波长漂移的影响,系统具良好的稳定性.     

HEM11 mode magnetically insulated transmission line oscillator： Simulation and experiment

A novel magnetically insulated transmission line oscillator （MILO） in which a modified HEM11 mode is taken as its main interaction mode （HEM11 mode MILO） is simulated and experimented in this paper. The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure. The special feature of such a device is that in the slow-wave-structure region, the interaction mode is HEM11 mode which is a TM-like one that could interact with electron beams effectively; and in the coaxial output region, the microwave mode is TE11 mode which has a favourable field density pattern to be directly radiated. Employing an electron beam of about 441 kV and 39.7 kA, the HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation. The power conversion efficiency is about 8.4 % and the generated microwave is in a TEll-like circular polarization mode. In a preliminary experiment investigation, high power microwave is detected from the device with a frequency of 1.46 GHz, an output energy of 43 J 47 J, and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV450 kV, and the diode current is 37 kA-39 kA.     

HEM₁₁ mode magnetically insulated transmission line oscillator:Simulation and experiment

A novel magnetically insulated transmission line oscillator(MILO) in which a modified HEM 11 mode is taken as its main interaction mode(HEM 11 mode MILO) is simulated and experimented in this paper.The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure.The special feature of such a device is that in the slow-wave-structure region,the interaction mode is HEM 11 mode which is a TM-like one that could interact with electron beams effectively;and in the coaxial output region,the microwave mode is TE 11 mode which has a favourable field density pattern to be directly radiated.Employing an electron beam of about 441 kV and 39.7 kA,the HEM 11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation.The power conversion efficiency is about 8.4 % and the generated microwave is in a TE 11-like circular polarization mode.In a preliminary experiment investigation,high power microwave is detected from the device with a frequency of 1.46 GHz,an output energy of 43 J-47 J,and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV-450 kV,and the diode current is 37 kA-39 kA.     

磁绝缘线振荡器的起振电压与注入电压关系的分析

粒子模拟和实验研究发现磁绝缘线振荡器(MILO)的起振电压会随注入工作电压的增大而增大, 通过进一步的分析与研究, 找到了引起该现象的根本原因, 即随着注入工作电压的增大, 工作电压上升前沿的斜率必然增大, 上升前沿斜率的增大必然引起起振电压的增大, 当斜率无限大时, MILO的起振电压等于工作电压. 因此, 工作电压上升前沿斜率的变化是引起MILO器件起振点变化的根本原因; 当注入电压上升沿的斜率固定不变时, 同一MILO器件的起振点不变, 即对应的起振电压值不变; 当注入电压上升沿的斜率增大时, 同一MILO器件的起振点对应的起振电压值随之增大. 对MILO器件的自磁绝缘临界电流公式进行了部分修正. 关键词： 磁绝缘线振荡器 工作电压 起振电压 工作曲线     

HEM11 mode magnetically insulated transmission[2mm] line oscillator: simulation and experiment

A novel magnetically insulated transmission line oscillator (MILO) in which a modified HEM₁₁ mode is taken as its main interaction mode (HEM₁₁ mode MILO) is simulated and experimented in this paper. The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure. The special feature of such a device is that in the slow-wave-structure region, the interaction mode is HEM₁₁ mode which is a TM-like one that could interact with electron beams effectively; and in the coaxial output region, the microwave mode is TE₁₁ mode which has a favourable field density pattern to be directly radiated. Employing an electron beam of about 441 kV and 39.7 kA, HEM₁₁ mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation. The power conversion efficiency is about 8.4 % and the generated microwave is in a TE₁₁-like circular polarization mode. In a preliminary experiment investigation, high power microwave is detected from the device with a frequency of 1.46 GHz, an output energy of 43 J-47 J, and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV-450 kV, and the diode current is 37 kA-39 kA.     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

HPHT Synthesis of High-Quality Diamond Single Crystals with Micron Grain Size

High-quality diamond single crystals with micron grain size are synthesized with a new high-pressure and high-temperature （HPHT） synthesis technique in a cubic anvil high pressure apparatus. Morphology of the synthesized diamonds is observed by a scanning electron microscope （SEM）. The samples are characterized using laser Raman spectra. The results show that the new synthesis technique improves the nucleation of diamond greatly, and diamond single crystals with perfect morphology and micron grain size are successfully synthesized, with the average grain size of about 6μm. This work provides a new synthesis technique to implement industrialization of high-quality diamond single crystals with super-fine grain size, and paves the way for future development.