Versuche zur Herstellung eines «Bis(triasterans)» und Synthese des heterocyclischen (Tricyclo[4.4.1.01,6]undeca-3,8-dien-11,11-dimethyl)sulfits

Tentative Synthesis of ‘Bis(triasterane)’ and Synthesis of the Heterocyclic (Tricyclo[4.4.1.0^1,6]undeca-3,8-diene-11,11-dimethyl)sulfite The synthesis of the bis(triasterane) ( 1 ) has been tried; the reaction of ‘isotetraline’ (1,4,5,8-Tetrahydronaphthalene; 2 ) with diazomalonate yielded the tricyclic systems 5 and 6 , and not 4 . Hydrolysis of 5 gave the monocarboxylic acid 7 , and not the dicarboxylic acid 9 . The latter could be obtained from the dibromoderivative 8 , but 9 couldn't be converted to the acyl chloride 10 . The reduction of 9 with LiAlH₄ yielded the crystalline diol 11 , which was cyclized with SOCl₂ to the heterocycle 12 . The spectral data of the new compounds 5, 6, 7, 11 and 12 are reported and discussed.     

Fabrication of ridge waveguides in zinc-substituted lithium niobate by means of ion-beam enhanced etching

We present results on the fabrication and characterization of ridge waveguides in zinc-substituted lithium niobate. High-quality waveguides were fabricated by a combination of liquid-phase epitaxy and multiple applications of ion-beam enhanced etching. The two major demands on ridge waveguides, a very low side-wall roughness and a rectangle shape with side-wall angles close to 90 degrees , were realized simultaneously by using this technique. Single-mode waveguiding at a wavelength of 1064 nm was demonstrated with attenuation values of 0.9 dB/cm.     

Infrared and Raman spectroscopy of particle-beam induced damage of silicon carbide

The damaging of 6H-SiC by ion implantation (Ar⁺, 320 keV) leads to the formation of a light-absorbing surface layer with a thickness of about 0.4 μm and a dielectric function which indicates a disordering of the crystal structure. Raman spectra show the existence of amorphous carbon, silicon and silicon carbide. Ion bombardment with 1.4 MeV He⁺ ions generates a 3 μm thick surface layer with small lattice distortions and light-absorbing centers and a 0.4 μm thick interface layer with a larger refractive index.     

SIMS-characterization of ultra shallow boron-profiles after BF 2 + -and B+-low-energy-implantation in silicon

It has been shown using SIMS profiling that, by means of low energy ion implantation into crystalline and amorphous silicon, doping profiles with depths around 30 nm can be reproducibly produced. The deposition of a cap layer onto the silicon surface considerably improves the depth resolution of the SIMS apparatus in the case of extremely shallow doping layers. Fifty nanometre thick Au/Ge cap layers were applied successfully for the accurate measurement of the trailing course of the boron distribution. For future measurements of the course of reaction, a silicon cap layer is necessary to avoid or minimize the change of the sputter rate and the secondary ion yield in the interface region to the boron implanted silicon. A comparison with the measured boron distributions showed good agreement with simulations in the case of implantation into amorphous material.     

Ion-beam synthesis of InAs nanocrystals in crystalline silicon

The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high-fluence implantation of As and In ions with subsequent high-temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photoluminescence spectra of the samples.