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1.
The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -αc/r +Ar νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental values at potential index,ν = 1  相似文献   
2.
A presentation of some recent significant results obtained in the field of multinucleon transfer reactions at Coulomb barrier energies is given. The comparison of the experimental observables with the predictions of theoretical models treating quasi-elastic and deep-inelastic processes on the same ground reveals interesting features of the reaction mechanisms not clearly identified in the past.  相似文献   
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4.
The di-gamma and di-gluon decay widths of P-wave cc mesons are computed in nonrelativistic phenomenological quark-antiquark potential of the type V (r) =-4 3 α s r+ Ar ν with different choices of ν using spectroscopic parameters.The numerically obtained radial solutions are employed to obtain the di-gamma and di-gluon decay widths.The computed decay widths are consistent with other model predictions as well as with the known experimental values in the range of potential index 0.7 ≤ν≤ 1.1.  相似文献   
5.
Total ionization cross-sections of electron impact are calculated for the molecular targets CHx, CFx, SiHx, SiFx (x = 1-4) and CCl4 at incident energies 20-3 000 eV. The calculation is based on Complex Scattering Potential approach, as developed by us recently. This leads to total inelastic cross-sections, from which the total ionization cross-sections are extracted by reasonable physical arguments. Extensive comparisons are made here with the previous theoretical and experimental data. The present results are satisfactory except for the CFx and SiFx (x = 1-3) radicals, for which the experimental data are lower than most of the theories by more than 50%. Received 23 May 2002 / Received in final form 24 October 2002 Published online 21 January 2003 RID="a" ID="a"e-mail: knjoshipura@yahoo.com  相似文献   
6.
BaWO4 doped with ZnO (2, 3, 5, 7 and 10 wt%) nanostructured films are prepared on quartz substrates by pulsed laser ablation. The films are post annealed at 900°C. GIXRD analysis of the post-annealed films reveal the change of orientation of scheelite tetragonal crystal growth from 1 1 2 reflection plane to 0 0 4 planes when doping concentration is more than 3 wt%. The AFM images show that film with 7 wt% ZnO doping concentration has good ceramic pattern with surface features giving a minimum value of rms surface roughness suitable for optoelectronic device applications. The optical transmittance and band-gap energy of the films are found to decrease considerably on postannealing which can be due to the increase in grain size of the crystallites on annealing. Thus doping with ZnO improves the surface features of the films and increases the optical band-gap energy.  相似文献   
7.
The decay properties of the D and D s mesons are computed in a nonrelativistic phenomenological quark-antiquark potential of the type V (r) =-4 /3 α s /r+ Ar ν with different choices of ν.Numerical method to solve the Schrdinger equation has been used to obtain the spectroscopy of qQ mesons.The numerically obtained radial solutions are employed to obtain the decay constant and leptonic decay widths.It has been observed that predictions of the ground state masses and the decay widths are consistent with other model predictions as well as with the known experimental values.  相似文献   
8.
A facile and convenient method for the synthesis of highly functionalized 2‐(substitutedbiphenyl) based benzimidazoles has been reported by the application of Suzuki‐Miyaura cross coupling reaction.  相似文献   
9.
Large enhancements have been observed in the sub-barrier fusion cross sections for Ti+Ni systems in our previous studies. Coupled channel calculations incorporating couplings to 2+ and 3 states failed to explain these enhancements completely. A possibilty of transfer channels contributing to the residual enhancements had been suggested. In order to investigate the role of relevant transfer channels, measurements of one- and two-nucleon transfer were carried out for 46,48Ti+61Ni systems. The present paper gives the results of these studies.  相似文献   
10.
Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (Ts) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at Ts ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface morphology studies of the films using AFM reveal the formation of nanostructured indium oxide thin films.  相似文献   
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