Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

Cu-Chelex as a selective adsorbent for o-nitroso derivatives of phenolic substances

Summary Chelex resins in several metal forms were tested for selective uptake of o-nitrosonaphthols and o-nitrosophenols from aqueous solution. Cu-Chelex was the most efficient resin over a wide pH range, and the taken-up nitroso compounds were effectively eluted with concentrated ammonia: acetonitrile (4:1, v/v) after washing the resin with acetonitrile to eliminate non-specific binding. The upper and lower limits of uptake capacity of the resin for 1-nitroso-2-naphthol were 0.5 mol/100 mg and 1.25 mol/100 mg, respectively. A preliminary recovery experiment using urine and cucumber juice showed that Cu-Chelex would be useful for screening of o-nitroso derivatives of phenolic substances in complicated samples such as biological fluids and foods.     

Preparation of New Photosensitive ZrO2 Gel Films Using Hydroxyl-Substituted Aromatic Ketones as Chemical Modification Reagents and their Patterning

ZrO₂ gel films were prepared from zirconium tetra-n-butoxide chemically modified with one of hydroxyl-substituted aromatic ketones and 1′-hydroxy-2′-acetonaphthone, by the sol-gel method. The obtained gel film showed an absorption band, characteristic of the π-π* transition of chelate ring, at around 410 nm. The band was shifted to longer wavelength region than those for the gel films using β-diketones. The reason is thought that the hydroxyl-substituted aromatic ketone has π-electron system to form the condensed chelate ring. The absorption band associated with the chelate ring gradually decreased in intensity with UV-irradiation using a high pressure mercury lamp. This indicates that the chelate ring dissociates by the UV-irradiation and that the gel film exhibits photosensitivity. Utilizing the photosensitivity, fine patterns (about 1 μm) could be fabricated by UV-irradiation through a mask and leaching.     

Profiling analysis of oligosaccharides in antibody pharmaceuticals by capillary electrophoresis

Carbohydrate chains in glycoprotein pharmaceuticals have important roles for the expression of their biological activities. Therefore, development of an assessment method for the carbohydrate chains is an important parameter for quality control of glycoprotein pharmaceuticals such as newly developed therapeutic antibodies. In this report, we applied capillary electrophoresis with laser-induced fluorescence detection to the analysis of carbohydrate chains after releasing with glycoamidase followed by derivatization with 3-aminobenzoic acid. We found that four major oligosaccharides present in antibody pharmaceuticals were successfully separated with good resolution. The present method showed good precision in both migration times and relative peak areas, and gave comparable accuracy with that using a derivatization method with 8-aminopyrene-1,3,6-trisulfonate.     

Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

Reduction of inelastic scattering effect by introduction of GalnAs/GalnP strain-compensated superlattice into multi-quantum barriers

The effect of inelastic scattering on the electron reflection in multi-quantum barriers (MQBs) has been examined using the damped resonant tunnelling model for the first time. The electron reflectivity in the virtual barrier region for unstrained GalnAs/InP MQB deteriorates below 100% by about 10% for phase relaxation time of 0.22ps. We propose a strain-compensated GalnAs/GalnP MQB which not only has virtual barrier 4 times as high as that of an unstrained MQB, but whose reflectivity deterioration is reduced to less than 5% in comparison with 10% for unstrained MQB for the same phase relaxation time. We have also successfully grown a Ga_0.25In_0.75As (1.5% compressive) well/Ga_0.25In_0.75P (1.2% tensile) barrier short-period superlattice with six wells by chemical beam epitaxy, which exhibits the possibility of fabrication of the strain-compensated MQBs.     

Photorefractive effect in the relaxor ferroelectric material 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3

The photorefractive effect in a nominally undoped 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 single crystal is measured. We report what is, to our knowledge, the first observation of the photorefractive effect in Pb-based relaxor ferroelectric crystals. The crystal is grown by the flux solution method. Then it is cut into a 2 mm x 4 mm x 8 mm piece and electrically poled along the [111] direction. The coupling constant of the two-wave mixing is 17 cm(-1), and the normalized time constant under 1-W/cm(2) illumination is 12 s at a wave-length of 476 nm. The effective trap density is calculated as 5 x 10(16) cm(-3) from the Debye screening length under the assumption of Kukhtarev's band-transport model. The dominant carrier is identified to be holes from the direction of two-wave mixing energy transfer.