Quantitative Depth Profiling of K-Doped Fullerene Films Using XPS and SIMS

 Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling (XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions. It was found that sputtering by Ar⁺ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by O⁺ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations such as hydrogenation are discussed. Received March 4, 2002; accepted July 26, 2002     

On formal integration in composition rings of polynomials

This author wants to express his thanks to the School of Information Engineering at Teesside Polytechnic, Middlesbrough, England, for its support and hospitality during a visiting appointment of 3 months in 1989, when this paper was written.     

Einige Winke zur Beschleunigung der Stickstoffanalyse

Ohne Zusammenfassung     

The kinetics of the (5 × 20) → (1 × 1) structural transition for Au(100)

The kinetics of the anion-induced (5 × 20) → (1 × 1) surface structural transition of reconstructed Au(100) electrodes was studied in sulfate-containing solutions by current transients. It is shown that lifting of the reconstruction follows a nucleation-and-growth type behavior which can be described by the Avrami equation. Moreover, for high positive potentials, i.e., high anion coverages, the current-transient analysis reveals instantaneous nucleation, whereas for low transition overpotentials and long transition times a mechanism with constant transition rate prevails. Apparent activation energies, which depend strongly on the electrode potential, are derived from the temperature dependence of the Avrami plots.     

Kinetic model for hydrocarbon-assisted particulate boron combustion

A kinetic model is presented to describe the high temperature (1800 K < T < 3000 K) surface oxidation of particulate boron in a hydrocarbon combustion environment. The model includes a homogeneous gas-phase B/O/H/C oxidation mechanism consisting of 19 chemical species and 58 forward and reverse elementary reactions, multi-component gas-phase diffusion, and a heterogeneous surface oxidation mechanism consisting of ‘elementary’ adsorption and desorption reaction steps. Thermochemical and kinetic parameters for the surface reactions are estimated from available experimental data and/or elementary transition state arguments. The kinetic processes are treated using a generalized kinetics code, with embedded sensitivity analysis, for the combustion of a one-dimensional (particle radius), spherical particle. Model results are presented for the oxidation of a 200 μm boron particle in a JP-4/air mixture at ambient temperatures of 1400 K and 2000 K. These results include temperature and gas-phase species profiles as a function of radial distance and particle burning rates. © 1994 John Wiley & Sons, Inc.     

Spreading of a smectic A liquid crystal on a rotating disc

We describe the dynamics of spreading of a smectic A liquid crystal deposited on a rotating disc. We show the existence of several regimes according to the film thickness. If it is thick enough, the thinning is controlled by bulk permeation; at intermediate thicknesses the surface dissipation dominates, whereas viscous effects begin to be felt only at very small thickness.